MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 3

• Manufacturer Part Number: MMBT6427LT1G
• Description: TRANS SS DARL NPN 40V SOT23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of MMBT6427LT1G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.05 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Capacitance, Input: 15 pF
• Current, Gain: 140000
• Current, Output: 500 mADC
• Package Type: SOT-23
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 556
• Voltage, Collector To Emitter, Saturation: 1.5 VDC
• Voltage, Input: 12 VDC
• Voltage, Output: 40 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6427LT1GOS; MMBT6427LT1GOS; MMBT6427LT1GOSTR

500
200
100
200
100
5.0
50
20
10
70
50
30
20
10
1.0
10
BANDWIDTH = 10 Hz TO 15.7 kHz
I
C
20
2.0
= 10 mA
Figure 4. Total Wideband Noise Voltage
100 mA
1.0 mA
50 100 200
5.0
R
Figure 2. Noise Voltage
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
500 1 k 2 k
20
BANDWIDTH = 1.0 Hz
R
S
≈ 0
50
I
C
= 1.0 mA
100
100 mA
5 k 10 k 20 k
200
NOISE CHARACTERISTICS
10 mA
(V
CE
http://onsemi.com
500
50 k 100 k
= 5.0 Vdc, T
1000
3
0.07
0.05
0.03
0.02
A
2.0
1.0
0.7
0.5
0.3
0.2
0.1
8.0
6.0
4.0
2.0
14
12
10
0
= 25°C)
10 20
1.0
I
C
2.0
= 1.0 mA
50 100 200
Figure 5. Wideband Noise Figure
5.0
Figure 3. Noise Current
R
S
, SOURCE RESISTANCE (kW)
10
f, FREQUENCY (Hz)
100 mA
500 1 k 2 k
I
C
20
10 mA
100 mA
= 1.0 mA
BANDWIDTH = 10 Hz TO 15.7 kHz
BANDWIDTH = 1.0 Hz
10 mA
50
100
5 k 10 k 20 k
200
500 1000
50 k 100 k