MMBT6427LT1G ON Semiconductor, MMBT6427LT1G Datasheet - Page 4

• Manufacturer Part Number: MMBT6427LT1G
• Description: TRANS SS DARL NPN 40V SOT23
• Manufacturer: ON Semiconductor
• Type: Small Signalr

Specifications of MMBT6427LT1G

• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 500µA, 500mA
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 225mW
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 40 V
• Emitter- Base Voltage Vebo: 12 V
• Collector- Base Voltage Vcbo: 40 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.05 uA
• Power Dissipation: 225 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 0.5 A
• Dc Collector/base Gain Hfe Min: 10000
• Minimum Operating Temperature: - 55 C
• Capacitance, Input: 15 pF
• Current, Gain: 140000
• Current, Output: 500 mADC
• Package Type: SOT-23
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Ambient: 556
• Voltage, Collector To Emitter, Saturation: 1.5 VDC
• Voltage, Input: 12 VDC
• Voltage, Output: 40 VDC
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Frequency - Transition: -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT6427LT1GOS; MMBT6427LT1GOS; MMBT6427LT1GOSTR

200 k
100 k
7.0 k
5.0 k
3.0 k
2.0 k
70 k
50 k
30 k
20 k
10 k
7.0
5.0
3.0
2.0
1.6
1.4
1.2
1.0
0.8
0.6
20
10
0.04
5.0
5.0
T
7.0
J
V
T
7.0
= 125°C
BE(sat)
J
V
V
= 25°C
0.1
BE(on)
CE(sat)
10
@ I
25°C
10
@ V
0.2
- 55°C
@ I
C
Figure 8. DC Current Gain
Figure 10. “On” Voltages
/I
V
I
I
B
C
C
R
CE
C
Figure 6. Capacitance
20
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
/I
, REVERSE VOLTAGE (VOLTS)
= 1000
B
= 5.0 V
0.4
= 1000
20
30
30
1.0
50 70 100
50 70 100 200 300
2.0
SMALL−SIGNAL CHARACTERISTICS
4.0
V
CE
T
J
= 5.0 V
= 25°C
200 300
10
C
ibo
http://onsemi.com
20
C
obo
500
500
40
4
- 1.0
- 2.0
- 3.0
- 4.0
- 5.0
- 6.0
4.0
2.0
1.0
0.8
0.6
0.4
0.2
3.0
2.5
2.0
1.5
1.0
0.5
0.5
0.1 0.2
5.0 7.0 10
I
C
*R
q
V
f = 100 MHz
T
*APPLIES FOR I
VB
= 10 mA
CE
J
1.0
qVC
= 25°C
Figure 7. High Frequency Current Gain
Figure 9. Collector Saturation Region
FOR V
= 5.0 V
Figure 11. Temperature Coefficients
FOR V
0.5 1.0 2.0
2.0
BE
CE(sat)
I
I
50 mA
C
C
, COLLECTOR CURRENT (mA)
, COLLECTOR CURRENT (mA)
20
C
/I
0.5
I
B
B
, BASE CURRENT (mA)
≤ h
30
5.0 10 20
FE
10
/3.0
250 mA
50 70 100
20
500 mA
50
50
25°C TO 125°C
- 55°C TO 25°C
25°C TO 125°C
- 55°C TO 25°C
100 200
100 200
200 300
T
J
= 25°C
500 1000
500
500