NJT4030PT3G ON Semiconductor, NJT4030PT3G Datasheet - Page 3

• Manufacturer Part Number: NJT4030PT3G
• Description: TRANS PNP BIPO 3A 40V SOT-223
• Manufacturer: ON Semiconductor

Specifications of NJT4030PT3G

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 1V
• Power - Max: 2W
• Frequency - Transition: 160MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NJT4030PT3GOSTR

1. Pulse Test: Pulse Width  300 ms, Duty Cycle  2%.
2. f
ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS (Note 1)
DYNAMIC CHARACTERISTICS
Collector--Emitter Sustaining Voltage
Emitter--Base Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector--Emitter Saturation Voltage
Base--Emitter Saturation Voltage
Base--Emitter On Voltage
DC Current Gain
Output Capacitance
Input Capacitance
Current--Gain -- Bandwidth Product (Note 2)
T
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(I
(I
(V
(V
(I
C
E
C
C
C
C
C
C
C
C
C
= |h
CB
BE
CB
EB
= 10 mAdc, I
= 50 mAdc, I
= 0.5 Adc, I
= 1.0 Adc, I
= 3.0 Adc, I
= 1.0 Adc, I
= 1.0 Adc, V
= 0.5 Adc, V
= 1.0 Adc, V
= 3.0 Adc, V
= 500 mA, V
FE
= 40 Vdc)
= 6.0 Vdc)
= 10 Vdc, f = 1.0 MHz)
= 5.0 Vdc, f = 1.0 MHz)
|  f
test
B
B
B
B
C
CE
CE
CE
CE
CE
B
= 5.0 mAdc)
= 10 mAdc)
= 0.3 Adc)
= 0.1 Adc)
= 0 Adc)
= 0 Adc)
= 2.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 1.0 Vdc)
= 10 V, F
test
Characteristic
= 1.0 MHz)
(T
C
= 25C unless otherwise noted)
http://onsemi.com
3
V
Symbol
V
V
V
CEO(sus)
V
I
I
CE(sat)
BE(sat)
BE(on)
h
C
CBO
EBO
C
EBO
f
FE
ob
T
ib
Min
220
200
100
6.0
40
--
--
--
--
--
--
--
--
--
--
Typ
130
160
40
--
--
--
--
--
--
--
--
--
--
--
--
0.150
0.200
0.500
Max
100
100
400
1.0
1.0
--
--
--
--
--
--
--
nAdc
nAdc
Unit
MHz
Vdc
Vdc
Vdc
Vdc
Vdc
pF
pF
--