NJT4030PT3G ON Semiconductor, NJT4030PT3G Datasheet - Page 5

• Manufacturer Part Number: NJT4030PT3G
• Description: TRANS PNP BIPO 3A 40V SOT-223
• Manufacturer: ON Semiconductor

Specifications of NJT4030PT3G

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 1V
• Power - Max: 2W
• Frequency - Transition: 160MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NJT4030PT3GOSTR

600
500
400
300
200
100
0.001
0.01
0.01
0.1
0
0.1
1
1
0.001
1.0E--04
0.001
Figure 4. Collector- -Emitter Saturation Voltage
I
C
/I
Figure 6. Collector Saturation Region
B
= 10
1.0E--03
0.01
0.01
I
Figure 2. DC Current Gain
C
I
--40C
C
, COLLECTOR CURRENT (A)
0.1 A
, COLLECTOR CURRENT (A)
I
B
, BASE CURRENT (A)
25C
1.0E--02
0.1
0.1
150C
1 A
0.5 A
I
C
25C
1.0E--01
= 2 A
TYPICAL CHARACTERISTICS
1
1
V
150C
CE
http://onsemi.com
= 1 V
--40C
1.0E+00
10
10
5
0.01
700
600
500
400
300
200
100
0.1
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0
1
0
0.001
0.001
0.001
Figure 5. Collector- -Emitter Saturation Voltage
I
V
C
/I
CE
B
= 50
= 2 V
0.01
0.01
I
I
0.01
I
Figure 3. DC Current Gain
C
C
C
Figure 7. V
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
--40C
150C
25C
BE(on)
0.1
0.1
0.1
--40C
25C
25C
150C
Voltage
150C
1
1
1
V
--40C
CE
= 4 V
10
10
10