NJT4030PT3G ON Semiconductor, NJT4030PT3G Datasheet - Page 6

• Manufacturer Part Number: NJT4030PT3G
• Description: TRANS PNP BIPO 3A 40V SOT-223
• Manufacturer: ON Semiconductor

Specifications of NJT4030PT3G

• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 40V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 300mA, 3A
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 1V
• Power - Max: 2W
• Frequency - Transition: 160MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: NJT4030PT3GOSTR

350
300
250
200
150
100
50
1.3
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
200
180
160
140
120
100
0
80
60
40
20
0
0
0
0.001
0.001
Figure 12. Current- -Gain Bandwidth Product
I
C
Figure 8. Base- -Emitter Saturation Voltage
/I
f
test
V
B
T
CE
J
= 10
= 25C
= 1 MHz
1
= 10 V
V
Figure 10. Input Capacitance
EB
0.01
I
I
C
C
, EMITTER BASE VOLTAGE (V)
, COLLECTOR CURRENT (A)
, COLLECTOR CURRENT (A)
25C
--40C
150C
2
0.01
3
0.1
4
0.1
TYPICAL CHARACTERISTICS
f
test
T
1
J
= 25C
= 1 MHz
5
http://onsemi.com
6
10
1
6
0.01
100
1.2
1.1
1.0
0.9
0.8
0.7
0.6
0.5
0.4
0.3
0.2
0.1
0.1
80
60
40
20
10
0
0
1
0.001
0
1
I
C
/I
Figure 9. Base- -Emitter Saturation Voltage
B
= 50
V
5
CE
V
CB
Figure 13. Safe Operating Area
Figure 11. Output Capacitance
, COLLECTOR--EMITTER VOLTAGE (V)
0.01
I
, COLLECTOR BASE VOLTAGE (V)
C
, COLLECTOR CURRENT (A)
10
--40C
150C
25C
10 ms
15
0.1
10
100 ms
20
f
test
25
T
0.5 ms
J
1
= 1 MHz
= 25C
30
1 ms
100
10
35