MJF44H11G ON Semiconductor, MJF44H11G Datasheet - Page 2

• Manufacturer Part Number: MJF44H11G
• Description: TRANS POWER NPN 10A 80V TO220FP
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJF44H11G

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 2W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 60
• Maximum Operating Frequency: 50 MHz
• Minimum Operating Temperature: - 55 C
• Current, Collector: 10 A
• Current, Gain: 40
• Frequency: 50 MHz
• Package Type: TO-220
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJF44H11GOS

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
DYNAMIC CHARACTERISTICS
SWITCHING TIMES
Collector−Emitter Sustaining Voltage
Collector Cutoff Current
Emitter Cutoff Current
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
DC Current Gain
DC Current Gain
Collector Capacitance
Gain Bandwidth Product
(I
Delay and Rise Times
(I
Storage Time
(I
Fall Time
(I
C
C
C
C
= 0.5 Adc, V
= 5 Adc, I
= 5 Adc, I
= 5 Adc, I
0.07
0.05
0.03
0.02
0.01
1.0
0.7
0.5
0.3
0.2
0.1
(I
(V
(V
(I
(I
(V
(V
(V
C
C
C
0.01
CE
EB
CE
CE
CB
= 30 mA, I
= 8 Adc, I
= 8 Adc, I
= Rated V
= 5 Vdc)
= 1 Vdc, I
= 1 Vdc, I
= 10 Vdc, f
0.01
B1
B1
B1
D = 0.5
CE
0.02
= 0.5 Adc)
= I
= I
0.05
0.02
0.1
0.2
B2
B2
= 10 Vdc, f = 20 MHz)
B
B
B
SINGLE PULSE
= 0.5 Adc)
= 0.5 Adc)
= 0.4 Adc)
= 0.8 Adc)
C
C
= 0)
CEO
test
= 2 Adc)
= 4 Adc)
0.05
, V
= 1 MHz)
BE
Characteristic
= 0)
0.1
(T
0.2
C
= 25°C unless otherwise noted)
Figure 1. Thermal Response
0.5
http://onsemi.com
1.0
t, TIME (ms)
2.0
MJF44H11
MJF45H11
MJF44H11
MJF45H11
MJF44H11
MJF45H11
MJF44H11
MJF45H11
MJF44H11
MJF45H11
2
Z
R
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
qJC(t)
J(pk)
qJC
5.0
= 1.56°C/W MAX
- T
= r(t) R
C
= P
V
Symbol
V
V
CEO(sus)
10
t
qJC
CE(sat)
I
I
BE(sat)
(pk)
d
h
C
CES
EBO
f
t
FE
t
+ t
1
T
cb
s
f
Z
qJC(t)
r
20
Min
80
60
40
−
−
−
−
−
−
−
−
−
−
−
−
−
−
50
P
(pk)
DUTY CYCLE, D = t
100
Typ
130
230
300
135
500
500
140
100
50
40
−
−
−
−
−
−
−
t
1
t
2
200
Max
1.0
1.0
1.5
10
−
−
−
−
−
−
−
−
−
−
−
−
−
1
/t
2
500
Unit
MHz
Vdc
Vdc
Vdc
mA
mA
pF
ns
ns
ns
−
1.0 k