MJF44H11G ON Semiconductor, MJF44H11G Datasheet - Page 3

• Manufacturer Part Number: MJF44H11G
• Description: TRANS POWER NPN 10A 80V TO220FP
• Manufacturer: ON Semiconductor
• Type: Powerr

Specifications of MJF44H11G

• Transistor Type: NPN
• Current - Collector (ic) (max): 10A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 1V @ 400mA, 8A
• Current - Collector Cutoff (max): 1µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 4A, 1V
• Power - Max: 2W
• Frequency - Transition: 50MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: NPN
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 10 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 10 A
• Dc Collector/base Gain Hfe Min: 60
• Maximum Operating Frequency: 50 MHz
• Minimum Operating Temperature: - 55 C
• Current, Collector: 10 A
• Current, Gain: 40
• Frequency: 50 MHz
• Package Type: TO-220
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 3.5 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 1 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJF44H11GOS

100
5.0
3.0
2.0
1.0
0.5
0.3
0.2
0.1
50
30
20
10
1.0
Figure 2. Maximum Rated Forward Bias
2.0 3.0
T
DUTY CYCLE ≤ 50%
V
C
CE
≤ 70° C
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
Safe Operating Area
5.0
MJF44H11/MJF45H11
7.0
3.0
2.0
1.0
T
A
0
10
T
60
40
20
dc
C
0
0
20
20
1.0 ms
30
40
Figure 3. Power Derating
100 ms
50
http://onsemi.com
10 ms
70
1.0 ms
T, TEMPERATURE (°C)
60
T
100
C
T
A
80
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided
T
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
J(pk)
100
There are two limitations on the power handling ability of
The data of Figure 2 is based on T
v 150°C. T
120
140
J(pk)
160
may be calculated from the data in
J(pk)
= 150°C; T
C
− V
C
CE
is