2N5886G ON Semiconductor, 2N5886G Datasheet

2N5886G

Manufacturer Part Number

2N5886G

Description

TRANS NPN PWR GP 25A 80V TO3

Manufacturer

ON Semiconductor

Type

High Powerr

Datasheets

1.2N5885G.pdf (6 pages)

2.2N5886G.pdf (4 pages)

Specifications of 2N5886G

Transistor Type

NPN

Current - Collector (ic) (max)

25A

Voltage - Collector Emitter Breakdown (max)

80V

Vce Saturation (max) @ Ib, Ic

4V @ 6.25A, 25A

Current - Collector Cutoff (max)

2mA

Dc Current Gain (hfe) (min) @ Ic, Vce

20 @ 10A, 4V

Power - Max

200W

Frequency - Transition

4MHz

Mounting Type

Chassis Mount

Package / Case

TO-204, TO-3

Transistor Polarity

NPN

Number Of Elements

Collector-emitter Voltage

80V

Collector-base Voltage(max)

80V

Emitter-base Voltage (max)

Collector Current (dc) (max)

25A

Dc Current Gain (min)

Power Dissipation

200W

Frequency (max)

4MHz

Operating Temp Range

-65C to 200C

Operating Temperature Classification

Military

Mounting

Through Hole

Pin Count

2 +Tab

Package Type

TO-204

Mounting Style

Through Hole

Collector- Emitter Voltage Vceo Max

80 V

Emitter- Base Voltage Vebo

5 V

Maximum Dc Collector Current

25 A

Maximum Operating Temperature

+ 200 C

Continuous Collector Current

25 A

Dc Collector/base Gain Hfe Min

Maximum Operating Frequency

4 MHz

Minimum Operating Temperature

- 65 C

Current, Collector

25 A

Current, Gain

Frequency

4 MHz

Polarity

NPN

Primary Type

Resistance, Thermal, Junction To Case

0.875 °C/W

Voltage, Breakdown, Collector To Emitter

80 V

Voltage, Collector To Base

80 V

Voltage, Collector To Emitter

80 V

Voltage, Collector To Emitter, Saturation

4 V

Voltage, Emitter To Base

5 V

Lead Free Status / RoHS Status

Lead free / RoHS Compliant

Other names

2N5886GOS

Available stocks

Company

Part Number

Manufacturer

Quantity

Price

Company:

Bonase Electronics (HK) Co., Limited

Part Number:

2N5886G

Manufacturer:

ON Semiconductor

Quantity:

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2N5883, 2N5884 (PNP)

2N5885, 2N5886 (NPN)

Complementary Silicon

High−Power Transistors

general−purpose power amplifier and switching applications.

Features

•

Stresses exceeding Maximum Ratings may damage the device. Maximum

Ratings are stress ratings only. Functional operation above the Recommended

Operating Conditions is not implied. Extended exposure to stresses above the

Recommended Operating Conditions may affect device reliability.

1. Indicates JEDEC registered data. Units and conditions differ on some

*For additional information on our Pb−Free strategy and soldering details, please

THERMAL CHARACTERISTICS

March, 2006 − Rev. 11

MAXIMUM RATINGS

download the ON Semiconductor Soldering and Mounting Techniques

Reference Manual, SOLDERRM/D.

Collector−Emitter Voltage

Collector−Base Voltage

Emitter−Base Voltage

Collector Current −

Base Current

Total Device Dissipation @ T

Derate above 25°C

Operating and Storage Junction

Temperature Range

Thermal Resistance, Junction−to−Case

Complementary silicon high−power transistors are designed for

Low Collector−Emitter Saturation Voltage −

Low Leakage Current

Excellent DC Current Gain −

High Current Gain Bandwidth Product −

Pb−Free Packages are Available*

parameters and re−registration reflecting these changes has been requested.

All above values most or exceed present JEDEC registered data.

Continuous

Peak

CEX

Characteristic

CE(sat)

= 4.0 MHz (min) at I

= 20 (min) at I

Rating

2N5884 and 2N5886 are Preferred Devices

= 1.0 mAdc (max) at Rated Voltage

= 1.0 Vdc, (max) at I

(Note 1)

2N5883, 2N5885

2N5884, 2N5886

2N5883, 2N5885

2N5884, 2N5886

= 25°C

= 10 Adc

= 1.0 Adc

Î Î Î

Symbol

, T

= 15 Adc

CEO

stg

Î Î Î Î Î

– 65 to + 200

Value

0.875

1.15

Max

200

5.0

7.5

Î Î

Î Î Î Î

Î Î

Î Î Î Î

Î Î

Î Î Î Î

Î Î

Î Î Î Î

W/°C

°C/W

Unit

Vdc

Adc

°C

See detailed ordering and shipping information in the package

dimensions section on page 5 of this data sheet.

Preferred devices are recommended choices for future use

and best overall value.

SILICON POWER TRANSISTORS

25 AMPERE COMPLEMENTARY

60 − 80 VOLTS, 200 WATTS

2N588x = Device Code

MEX

ORDERING INFORMATION

MARKING DIAGRAM

http://onsemi.com

TO−204AA (TO−3)

CASE 1−07

= Pb−Free Package

= Assembly Location

= Year

= Work Week

= Country of Origin

2N588xG

STYLE 1

AYYWW

x = 3, 4, 5, or 6

MEX

Publication Order Number:

2N5883/D

Related parts for 2N5886G

2N5886G Summary of contents

Page 1

... All above values most or exceed present JEDEC registered data. *For additional information on our Pb−Free strategy and soldering details, please download the ON Semiconductor Soldering and Mounting Techniques Reference Manual, SOLDERRM/D. © Semiconductor Components Industries, LLC, 2006 March, 2006 − ...

Page 2

ELECTRICAL ...

Page 3

TURN−ON TIME +2 ≤ − 100 ms DUTY CYCLE ≈ 2.0% TURN−OFF TIME +9 −11 V ≤ ...

Page 4

I , ...

Page 5

... CE(sat 0.3 0.5 0.7 1.0 2.0 3.0 5 COLLECTOR CURRENT (AMPERES) C Figure 12. “On” Voltages ORDERING INFORMATION Device 2N5883 2N5883G 2N5884 2N5884G 2N5885 2N5885G 2N5886 2N5886G 2 25°C J 1.6 1.2 V BE(sat) 0 0.4 V CE(sat 0.3 0.5 0.7 1.0 Package TO−204 TO−204 (Pb−Free) TO− ...

Page 6

... M M −Y− STYLE American Technical Support: 800−282−9855 Toll Free USA/Canada Japan: ON Semiconductor, Japan Customer Focus Center 2−9−1 Kamimeguro, Meguro−ku, Tokyo, Japan 153−0051 Phone: 81−3−5773−3850 http://onsemi.com 6 INCHES MILLIMETERS DIM MIN MAX MIN MAX A 1 ...

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