2N5886G ON Semiconductor, 2N5886G Datasheet - Page 3

• Manufacturer Part Number: 2N5886G
• Description: TRANS NPN PWR GP 25A 80V TO3
• Manufacturer: ON Semiconductor
• Type: High Powerr

Specifications of 2N5886G

• Transistor Type: NPN
• Current - Collector (ic) (max): 25A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 4V @ 6.25A, 25A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 10A, 4V
• Power - Max: 200W
• Frequency - Transition: 4MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 25A
• Dc Current Gain (min): 35
• Power Dissipation: 200W
• Frequency (max): 4MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 25 A
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 25 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 25 A
• Current, Gain: 4
• Frequency: 4 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.875 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5886GOS

100
TURN−ON TIME
5.0
2.0
1.0
0.5
0.2
0.1
20 ns
TURN−OFF TIME
50
20
10
t
−11 V
r
0.05
0.02
0.01
1.0
Figure 5. Active−Region Safe Operating Area
≤
1.0
0.5
0.2
0.1
0
Figure 2. Switching Time Equivalent Test Circuits
+2.0 V
0
0.02
CURVES APPLY BELOW RATED V
DUTY CYCLE ≈ 2.0%
DUTY CYCLE ≈ 2.0%
SINGLE PULSE
0.05
0.02
FOR CURVES OF FIGURES 3 & 6, R
INPUT LEVELS ARE APPROXIMATELY AS SHOWN.
FOR NPN, REVERSE ALL POLARITIES.
D = 0.5
2.0 3.0
V
0.1
0.2
CE
T
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMAL LIMITATION @ T
(SINGLE PULSE)
0.05
, COLLECTOR−EMITTER VOLTAGE (VOLTS)
J
= 200°C
−11 V
10 to 100 ms
5.0
0.1
+9.0 V
10 to 100 ms
0.01
t
7.0 10
r
≤ 20 ns
0.2
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
dc
CEO
2N5883, 2N5885
2N5884, 2N5886
R
10
C
R
10
B
B
V
= 25°C
B
20
0.5
BB
5 ms
& R
1 ms
L
30
+7.0 V
ARE VARIED.
V
R
1.0
CC
L
V
CC
R
500 ms
50
L
Figure 4. Thermal Response
3.0
−30 V
TO SCOPE
t
http://onsemi.com
70
r
2.0
3.0
TO SCOPE
−30 V
≤ 20 ns
t
r
≤ 20 ns
100
t, TIME (ms)
3
5.0
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation; i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
v 200°C. T
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
0.07
0.05
0.03
0.02
2.0
1.0
0.7
0.5
0.3
0.2
0.1
There are two limitations on the power handling ability of
The data of Figure 5 is based on T
q
q
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
T
0.3
J(pk)
JC
JC
10
(t) = r(t) q
= 0.875°C/W MAX
− T
0.5 0.7 1.0
C
20
= P
JC
J(pk)
(pk)
I
1
C
q
, COLLECTOR CURRENT (AMPERES)
JC
Figure 3. Turn−On Time
(t)
may be calculated from the data in
50
t
2.0
d
t
r
100
P
3.0
(pk)
DUTY CYCLE, D = t
T
I
V
V
200
C
J
CC
BE(off)
/I
5.0 7.0
= 25°C
B
t
1
= 30 V
= 10
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
J(pk)
t
= 2 V
2
500
10
= 200°C; T
1
/t
1000
2
C
20
− V
J(pk)
2000
C
30
CE
is