2N5886G ON Semiconductor, 2N5886G Datasheet - Page 4

• Manufacturer Part Number: 2N5886G
• Description: TRANS NPN PWR GP 25A 80V TO3
• Manufacturer: ON Semiconductor
• Type: High Powerr

Specifications of 2N5886G

• Transistor Type: NPN
• Current - Collector (ic) (max): 25A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 4V @ 6.25A, 25A
• Current - Collector Cutoff (max): 2mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 10A, 4V
• Power - Max: 200W
• Frequency - Transition: 4MHz
• Mounting Type: Chassis Mount
• Package / Case: TO-204, TO-3
• Transistor Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 80V
• Collector-base Voltage(max): 80V
• Emitter-base Voltage (max): 5V
• Collector Current (dc) (max): 25A
• Dc Current Gain (min): 35
• Power Dissipation: 200W
• Frequency (max): 4MHz
• Operating Temp Range: -65C to 200C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 2 +Tab
• Package Type: TO-204
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 80 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 25 A
• Maximum Operating Temperature: + 200 C
• Continuous Collector Current: 25 A
• Dc Collector/base Gain Hfe Min: 20
• Maximum Operating Frequency: 4 MHz
• Minimum Operating Temperature: - 65 C
• Current, Collector: 25 A
• Current, Gain: 4
• Frequency: 4 MHz
• Polarity: NPN
• Primary Type: Si
• Resistance, Thermal, Junction To Case: 0.875 °C/W
• Voltage, Breakdown, Collector To Emitter: 80 V
• Voltage, Collector To Base: 80 V
• Voltage, Collector To Emitter: 80 V
• Voltage, Collector To Emitter, Saturation: 4 V
• Voltage, Emitter To Base: 5 V
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 2N5886GOS

1000
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
10
700
500
300
200
100
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
0.3
0
0.01
0.3
PNP DEVICES
2N5883 and 2N5884
Figure 10. Collector Saturation Region
−55 °C
0.5 0.7 1.0
T
25°C
0.5 0.7 1.0
I
0.02
C
J
= 150°C
= 2.0 A
I
C
I
0.05
I
, COLLECTOR CURRENT (AMPERES)
C
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
B
, COLLECTOR CURRENT (AMPERES)
t
Figure 6. Turn−Off Time
, BASE CURRENT (AMPERES)
s
Figure 8. DC Current Gain
t
f
5.0 A
0.1
2.0
2.0
t
0.2
s
2N5883, 2N5884 (PNP) 2N5885, 2N5886 (NPN)
3.0
t
3.0
f
10 A
0.5
5.0
5.0 7.0
7.0
1.0
20 A
10
2.0
10
V
T
V
I
I
C
B1
CE
T
J
CC
/I
J
= 25°C
B
= I
= 25°C
= 4.0 V
= 30 V
= 10
http://onsemi.com
B2
20
5.0
20
30
30
10
4
3000
2000
1000
1000
700
500
300
700
500
300
200
100
2.0
1.6
1.2
0.8
0.4
70
50
30
20
10
0
0.01
0.1
0.3
NPN DEVICES
2N5885 and 2N5886
0.5 0.7
0.2
0.02
T
Figure 11. Collector Saturation Region
J
I
C
25°C
−55 °C
= 150°C
= 2.0 A
2N5883, 2N5884 (PNP)
2N5885, 2N5886 (NPN)
I
I
0.5
0.05
C
Figure 9. DC Current Gain
B
C
1.0
, COLLECTOR CURRENT (AMPERES)
, COLLECTOR CURRENT (AMPERES)
V
ib
R
Figure 7. Capacitance
, REVERSE VOLTAGE (VOLTS)
1.0
0.1
5.0 A
2.0
C
2.0
ob
0.2
3.0
10 A
C
5.0
0.5
ib
5.0 7.0
10
1.0
20 A
C
ob
2.0
20
10
T
J
V
T
= 25°C
CE
J
= 25°C
= 4.0 V
5.0
50
20
100
30
10