PMBTA13,215 NXP Semiconductors, PMBTA13,215 Datasheet - Page 4

• Manufacturer Part Number: PMBTA13,215
• Description: TRANS NPN 30V 500MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBTA13,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 250mW
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Dual
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Power Dissipation: 250 mW
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 500 mA
• Dc Collector/base Gain Hfe Min: 5000
• Maximum Operating Frequency: 125 MHz
• Minimum Operating Temperature: - 65 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933816520215; PMBTA13 T/R; PMBTA13 T/R

NXP Semiconductors
2004 Jan 22
handbook, full pagewidth
NPN Darlington transistors
V
80000
60000
40000
20000
CE
h FE
= 2 V.
10
0
−1
1
Fig.2 DC current gain; typical values.
4
10
10
PMBTA13; PMBTA14
2
I C (mA)
Product data sheet
MGD837
10
3