2SB1181TLQ Rohm Semiconductor, 2SB1181TLQ Datasheet
2SB1181TLQ
Manufacturer Part Number
2SB1181TLQ
Description
TRANSISTOR PNP 80V 1A SOT-428
Manufacturer
Rohm Semiconductor
Datasheet
1.2SB1260T100Q.pdf
(3 pages)
Specifications of 2SB1181TLQ
Transistor Type
PNP
Current - Collector (ic) (max)
1A
Voltage - Collector Emitter Breakdown (max)
80V
Vce Saturation (max) @ Ib, Ic
400mV @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
120 @ 100mA, 3V
Power - Max
1W
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
DPak, TO-252 (2 leads+tab), SC-63
Bce Pnp
Transistor Polarity
Collector Emitter Voltage V(br)ceo
80V
Power Dissipation Pd
1W
Dc Collector Current
1A
Operating Temperature Range
-55°C To +150°C
Transistor Case Style
SOT-428
No. Of Pins
3
Transistor Polarity
PNP
Dc Current Gain Hfe
82
Rohs Compliant
Yes
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant, Lead free / RoHS Compliant
Other names
2SB1181TLQ
2SB1181TLQTR
2SB1181TLQTR
Available stocks
Company
Part Number
Manufacturer
Quantity
Price
Company:
Part Number:
2SB1181TLQ
Manufacturer:
ROHM
Quantity:
46 000
Part Number:
2SB1181TLQ
Manufacturer:
ROHM/罗姆
Quantity:
20 000
Power Transistor (80V, 1A)
Features
1) Hight breakdown voltage and high current.
2) Good h
3) Low V
Complements the 2SD1898 / 2SD1863 / 2SD1733.
Structure
Epitaxial planar type
PNP silicon transistor
Absolute maximum ratings (Ta=25C)
○
∗
∗
∗
c
www.rohm.com
Collector-base voltage
Collector-emitter voltage
Emitter-base voltage
Collector current
Junction temperature
Storage temperature
Collector power
dissipation
1 2SB1260 : Pw=20ms duty=1/2
2 2SB1260 : When mounted on a 40 × 40 × 0.7 mm ceramic board.
3 2SB1241 : Printed circuit board, 1.7mm thick, collector copper plating 100mm
BV
2SB1260 / 2SB1181 / 2SB1241
2009 ROHM Co., Ltd. All rights reserved.
2SB1241 : Single pulse, Pw=100ms
CEO
=80V, I
CE(sat)
FE
linearty.
Parameter
.
2SB1260
2SB1241, 2SB1181
2SB1181
C
= 1A
Symbol
V
V
V
Tstg
I
P
Tj
CBO
CEO
EBO
I
CP
C
C
−55 to 150
Limits
−80
−80
150
0.5
−5
−1
−2
10
Dimensions (Unit : mm)
∗
2
1
2
0.65Max.
or larger.
ROHM : MPT3
EIAJ : SC-62
Denotes h
2SB1260
2SB1241
∗1
∗2
∗3
1/2
(1)
ROHM : ATV
1.5±0.1
0.4±0.1
2.54 2.54
6.8±0.2
(2)
FE
(1)
W (Tc=25 °C )
(3)
A (Pulse)
1.6±0.1
A (DC)
4.5
(2)
0.5±0.1
3.0±0.2
Unit
0.5±0.1
+0.2
−0.1
°C
°C
W
V
V
V
Abbreviated
symbol: BE
(3)
0.4±0.1
1.5±0.1
1.05
∗
2.5±0.2
(1) Emitter
(2) Collector
(3) Base
1.5
+0.2
−0.1
0.45±0.1
(1) Base
(2) Collector
(3) Emitter
0.4
+0.1
−0.05
2SB1181
0.75
2.3
ROHM : CPT3
EIAJ : SC-63
±
0.9
(1)
0.2
6.5
5.1
+
−
(2)
±
0.2
0.1
0.2
2.3
(3)
±
0.2
0.65
2009.12 - Rev.E
±
C0.5
0.1
(1) Base
(2) Collector
(3) Emitter
0.5
1.0
0.55
2.3
+
±
−
±
0.2
0.1
0.1
0.2
±
0.1
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2SB1181TLQ Summary of contents
Page 1
Power Transistor (80V, 1A) 2SB1260 / 2SB1181 / 2SB1241 Features 1) Hight breakdown voltage and high current. = 1A BV =80V, I CEO C 2) Good h linearty Low V . CE(sat) Complements the 2SD1898 / 2SD1863 / ...
Page 2
Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage 2SB1260, 2SB1181 DC current transfer ratio 2SB1241 Transition frequency 2SB1181 2SB1260 Output capacitance ...
Page 3
No copying or reproduction of this document, in part or in whole, is permitted without the consent of ROHM Co.,Ltd. The content specified herein is subject to change for improvement without notice. The content specified herein is for the purpose ...