2SB1181TLQ Rohm Semiconductor, 2SB1181TLQ Datasheet - Page 2

• Manufacturer Part Number: 2SB1181TLQ
• Description: TRANSISTOR PNP 80V 1A SOT-428
• Manufacturer: Rohm Semiconductor

Specifications of 2SB1181TLQ

• Transistor Type: PNP
• Current - Collector (ic) (max): 1A
• Voltage - Collector Emitter Breakdown (max): 80V
• Vce Saturation (max) @ Ib, Ic: 400mV @ 50mA, 500mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 120 @ 100mA, 3V
• Power - Max: 1W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: DPak, TO-252 (2 leads+tab), SC-63
• Bce Pnp: Transistor Polarity
• Collector Emitter Voltage V(br)ceo: 80V
• Power Dissipation Pd: 1W
• Dc Collector Current: 1A
• Operating Temperature Range: -55°C To +150°C
• Transistor Case Style: SOT-428
• No. Of Pins: 3
• Transistor Polarity: PNP
• Dc Current Gain Hfe: 82
• Rohs Compliant: Yes
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 2SB1181TLQ; 2SB1181TLQTR

Electrical characteristics (Ta=25C)
Packaging specifications and h
h
Electrical characteristic curves
○
2SB1260 / 2SB1181 / 2SB1241
Type
2SB1260
2SB1241
2SB1181
c
www.rohm.com
FE
Collector-base breakdown voltage
Collector-emitter breakdown voltage
Emitter-base breakdown voltage
Collector cutoff current
Emitter cutoff current
Collector-emitter saturation voltage
DC current transfer ratio
Output capacitance
Transition frequency
2009 ROHM Co., Ltd. All rights reserved.
values are classified as follows :
Item
h
FE
500
400
300
200
100
0.01
0.1
Fig.1 Ground Emitter Output Characteristics
0
1
0
1
COLLECOR - EMITTER VOLTAGE : V
4.5mA
5.0mA
Fig.4 Collector-Emitter Saturation
120 to 270
h
QR
QR
QR
COLLECTOR CURRENT : I
FE
Parameter
0.5
I
Voltage v s Collector Current
Q
C
/I
10
B
=20
10
Package
Code
Basic ordering
unit (pieces)
2SB1181
2SB1260
1
2SB1260, 2SB1181
2SB1241
2SB1181, 2SB1241
4.0mA
3.5mA
180 to 390
100
1.5
Ta=25 ℃
Pulsed
C
R
Ta=25 ℃
[mA]
CE
[V]
2
1000
3.0mA
2.5mA
2.0mA
1.5mA
1.0mA
I
B
=0.5mA
FE
2500
TL
Symbol
−
−
BV
BV
BV
V
Cob
I
I
h
CE(sat)
CBO
EBO
f
FE
CBO
CEO
EBO
T
Taping
2500
TV2
Min.
1000
120
120
−80
−80
1000
−
−
100
−5
100
10
−
−
−
−
−
−
0.1
10
1
1
0.2
Ta=25 ℃
V
CE
Fig.2 Grounded Emitter Propagation
=-5V
BASE TO EMITTER VOLTAGE : V
Fig.5 Transition Frewuency v s
Typ.
EMITTER CURRENT : I
100
20
25
−
−
−
−
−
−
−
−
T100
1000
0.4
Characteristics
Emitter Current
10
−
−
2/2
Max.
−0.4
390
390
0.6
−1
−1
−
−
−
−
−
−
100
E
[mA]
Ta=25 ℃
0.8
V
CE
MHz
Unit
μ A
μ A
=-5V
pF
pF
BE
V
V
V
V
−
−
[V]
1000
1
I
I
I
V
V
I
V
V
V
I
f=1MHz
C
C
E
C
E
= −50 μ A
CB
EB
CE
CE
CB
=0A
= −50 μ A
= −1mA
/I
B
= −60V
= −4V
= −3V, I
= −10V, I
= −10V
= −500mA/ −50mA
Fig.6 Emitter Input Capacitance v s. Emitter-Base Voltage
C
Conditions
= −0.1A
E
1000
100
=50mA, f=100MHz
1000
10
Collector Output Capacitance v s. Collector-Base
100
Fig.3 DC Current Gain v s Collector Current
10
1
0.1
COLLECTOR - BASE VOLTAGE : V
EMITTER - BASE VOLTAGE : V
COLLECTOR CURRENT : I
10
1
Cib
V
100
CE
10
=-1V
2009.12 - Rev.E
C
Ta=25 ℃
V
[mA]
EB
Cob
CE
Ta=25 ℃
f=1MHz
CB
(V)
=-3V
I
I
C
E
(V)
=0A
=0A
Data Sheet
1000
100