MJF15031G ON Semiconductor, MJF15031G Datasheet - Page 3

• Manufacturer Part Number: MJF15031G
• Description: TRANS POWER PNP 8A 150V TO220FP
• Manufacturer: ON Semiconductor

Specifications of MJF15031G

• Transistor Type: PNP
• Current - Collector (ic) (max): 8A
• Voltage - Collector Emitter Breakdown (max): 150V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 100mA, 1A
• Current - Collector Cutoff (max): 10µA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20 @ 4A, 2V
• Power - Max: 2W
• Frequency - Transition: 30MHz
• Mounting Type: Through Hole
• Package / Case: TO-220-3 Full Pack (Straight Leads)
• Transistor Polarity: PNP
• Mounting Style: Through Hole
• Collector- Emitter Voltage Vceo Max: 150 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 8 A
• Power Dissipation: 36 W
• Maximum Operating Temperature: + 150 C
• Continuous Collector Current: 8 A
• Dc Collector/base Gain Hfe Min: 40
• Maximum Operating Frequency: 30 MHz
• Minimum Operating Temperature: - 65 C
• Number Of Elements: 1
• Collector-emitter Voltage: 150V
• Collector-base Voltage: 150V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 8A
• Dc Current Gain (min): 40
• Frequency (max): 30MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Through Hole
• Pin Count: 3 +Tab
• Package Type: TO-220 Full-Pak
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: MJF15031GOS

0.05
0.03
0.02
0.5
0.3
0.2
0.1
20
10
100
5
3
2
1
50
30
20
10
2
8
5
3
2
1
0
5
Figure 2. Forward Bias Safe Operating Area
0.5
0
I
T
3
C
C
/I
100
B
= 25°C
0.7
Figure 3. Reverse Bias Switching Safe
V
= 10
Figure 5. Small−Signal Current Gain
CE
V
5
CE
WIREBOND LIMIT
THERMAL LIMIT
SECONDARY BREAKDOWN
LIMIT @ T
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
110
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
1
7
120
10
C
V
I
T
f, FREQUENCY (MHz)
Operating Area
C
= 25°C
C
CE
= 0.5 A
130
= 25°C
dc
= 10 V
20
2
140
30
5 ms
150
3
5 V
3 V
1.5 V
0 V
V
BE(off)
50 70
100 ms
NPN
= 9 V
PNP
5
100
http://onsemi.com
7
150
200
10
3
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
T
pulse limits are valid for duty cycles to 10% provided T
< 150_C.
Figure 1. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
1000
C
500
200
100
100
There are two limitations on the power handling ability of
The data of Figures 2 and 3 is based on T
50
30
20
10
90
60
50
20
10
is variable depending on conditions. Second breakdown
0
1.5
0.1
Figure 6. Current Gain — Bandwidth Product
3
T
0.2
J(pk)
5
I
V
C
Figure 4. Capacitances
R
, COLLECTOR CURRENT (AMP)
may be calculated from the data in
, REVERSE VOLTAGE (VOLTS)
7
0.5
10
C
C
ib
ib
(NPN)
(PNP)
1
(NPN)
(PNP)
30
2
50
J(pk)
C
C
ob
ob
5
(PNP)
(NPN)
= 150_C;
C
100
− V
J(pk)
150
10
CE