BGA 427 H6327 Infineon Technologies, BGA 427 H6327 Datasheet - Page 3

RF Amplifier RF SILICON MMIC

BGA 427 H6327

Manufacturer Part Number
BGA 427 H6327
Description
RF Amplifier RF SILICON MMIC
Manufacturer
Infineon Technologies
Type
Silicon MMIC Amplifierr
Datasheet

Specifications of BGA 427 H6327

Operating Frequency
1.8 GHz
P1db
7 dBm
Noise Figure
2.2 dB
Operating Supply Voltage
6 V
Supply Current
25 mA
Maximum Power Dissipation
150 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-343
Minimum Operating Temperature
- 65 C
Other names
BGA427H6327XT
S-Parameters at T
f
GHz
V
0.1
0.2
0.5
0.8
0.9
1
1.5
1.8
1.9
2
2.5
3
IN
Spice-model BGA 427
D
= 3V, Z
BGA 427-chip
including parasitics
11
S
MAG
0.1382
0.1179
0.1697
0.1824
0.1782
0.1827
0.1969
0.2021
0.2116
0.2437
0.176
0.258
R
11
C
1
o
P1
= 50
C
C
1
P2
ANG
-133.5
-156.1
-162.8
-167.7
172.8
153.3
R
A
-38.3
-20.8
-56.9
-69.1
-80.6
3
-16
= 25 °C, (Testfixture, Appl.1)
+V
T1
13
12
R
C’-E’-
Diode
GND
2
MAG
24.821
24.606
22.236
18.258
17.152
15.786
10.923
9.029
8.486
8.015
6.259
5.103
C
P3
C
S
P4
21
ANG
164.9
158.9
135.2
115.4
109.4
84.9
74.7
72.3
104
77
63
55
C
P5
EHA07381
3
T2
R
14
4
MAG
0.0022
0.0046
0.0104
0.0169
0.0194
0.0225
0.0385
0.0479
0.0517
0.0549
0.0709
0.0892
OUT
S
T1
T2
R
R
R
R
C
C
C
C
C
C
C'-E'-diode T1
12
1
2
3
4
1
P1
P2
P3
P4
P5
ANG
50.7
71.8
83.8
94.8
97.3
98.3
99.7
99.3
98.9
98.8
97.1
96.9
MAG
0.6435
0.6278
0.4453
0.4326
0.4129
0.3852
0.3917
0.3946
0.3991
0.4202
0.4477
T501
T501
14.5k
280
2.4k
170
2.3pF
0.2pF
0.2pF
0.6pF
0.1pF
0.1pF
0.54
2007-07-12
S
22
BGA427
ANG
174.8
166.9
147.3
140.2
139.4
138.1
139.6
139.3
138.8
138.3
134.6
131

Related parts for BGA 427 H6327