BGA 427 H6327 Infineon Technologies, BGA 427 H6327 Datasheet - Page 2

• Manufacturer Part Number: BGA 427 H6327
• Description: RF Amplifier RF SILICON MMIC
• Manufacturer: Infineon Technologies
• Type: Silicon MMIC Amplifierr

Specifications of BGA 427 H6327

• Operating Frequency: 1.8 GHz
• P1db: 7 dBm
• Noise Figure: 2.2 dB
• Operating Supply Voltage: 6 V
• Supply Current: 25 mA
• Maximum Power Dissipation: 150 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-343
• Minimum Operating Temperature: - 65 C
• Other names: BGA427H6327XT

Electrical Characteristics at T
Parameter
AC characteristics V
Insertion power gain
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Reverse isolation
f = 1.8 GHz
Noise figure
f = 0.1 GHz
f = 1 GHz
f = 1.8 GHz
Intercept point at the output
f = 1.8 GHz
Return loss input
f = 1.8 GHz
Return loss output
f = 1.8 GHz
Typical configuration
Appl.1
RF OUT
RF IN
Note: 1) Large-value capacitors should be connected from pin 3 to ground right at the device
2) The use of plated through holes right at pin 2 is essential for pc-board-applications. Thin
to provide a low impedance path (appl.1).
boards are recommended to minimize the parasitic inductance to ground.
100 pF
100 pF
BGA 427
D
GND
= 3 V, Z
+V
EHA07379
A
o
1 nF
= 25 °C, unless otherwise specified.
= 50 , Testfixture Appl.1
Appl.2
RF IN
100 pF
2.2 pF
2
Symbol
|S
S12
NF
IP
RL
RL
BGA 427
21
3out
in
out
|
GND
2
+V
100 nH
min.
100 pF
-
-
-
-
-
-
-
-
-
-
10 nF
Values
18.5
typ.
+ 7
>12
1.9
2.2
27
22
22
>9
2
RF OUT
EHA07380
100 pF
max.
2007-07-12
-
-
-
-
-
-
-
-
-
-
BGA427
Unit
dB
dBm
dB