UPC8151TB-E3 NEC, UPC8151TB-E3 Datasheet

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UPC8151TB-E3

Manufacturer Part Number
UPC8151TB-E3
Description
RF Amplifier Lo Current Amplifier
Manufacturer
NEC
Type
RF IC'sr
Datasheet

Specifications of UPC8151TB-E3

Operating Frequency
100 MHz to 900 MHz
Operating Supply Voltage
2.4 V to 3.3 V
Mounting Style
SMD/SMT
Package / Case
SOT-363
Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
UPC8151TB-E3
Manufacturer:
NEC
Quantity:
5 321
Part Number:
UPC8151TB-E3
Manufacturer:
NEC
Quantity:
15 000
Part Number:
UPC8151TB-E3
Manufacturer:
NEC
Quantity:
20 000
Part Number:
UPC8151TB-E3-A
Manufacturer:
RENESAS/瑞萨
Quantity:
20 000
ELECTRICAL CHARACTERISTICS
FEATURES
• SUPPLY VOLTAGE: Vcc = 2.4 to 3.3 V
• LOW CURRENT CONSUMPTION:
• HIGH EFFICIENCY:
• POWER GAIN:
• OPERATING FREQUENCY:
• EXCELLENT ISOLATION:
• HIGH DENSITY SURFACE MOUNTING:
NEC's UPC8151TB is a silicon RFIC designed as a buffer
amplifier for cellular or cordless telephones. This low current
amplifier operates on 3.0 V and is housed in a 6 pin super
minimold package.
The IC is manufactured using NEC's 20 GHz f
silicon bipolar process. This process uses silicon nitride
passivation film and gold electrodes. These materials protect
the chip surface from external pollution and prevent corrosion/
migration. Thus, this IC has excellent performance, uniformity
and reliability.
DESCRIPTION
SYMBOLS
RL
UPC8151TB; Icc = 4.2 mA TYP @ 3.0 V
UPC8151TB; P
UPC8151TB; G
100 MHz to 1900 MHz (Output port LC matching)
UPC8151TB; ISOL = 38 dB TYP @ f = 1 GHz
6 pin super minimold or SOT-363 package
ISOL
P
RL
IM
NF
Icc
G
1dB
OUT
P
IN
3
Circuit Current, No signal
Power Gain
Output Power at 1 dB Compression Point
Noise Figure
Input Return Loss(without matching circuit)
Output Return Loss (with external matching circuit)
3rd Order Intermodulation Distortion
f
f
Isolation
1
1
= 1.000 GHz, f
= 1.900 GHz, f
CELLULAR/CORDLESS TELEPHONES
1dB
P
PARAMETERS AND CONDITIONS
= 12.5 dB TYP @ f = 1 GHz
= +2.5 dBm TYP @ f = 1 GHz
PACKAGE OUTLINE
2
2
PART NUMBER
LOW CURRENT AMPLIFIER FOR
= 1.001 GHz, P
= 1.901 GHz, P
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
f = 1.00 GHz
f = 1.90 GHz
O(each)
O(each)
T
NESAT™ III
(T
= -20 dBm
= -20 dBm
A
= 25 °C, V
CC
= V
OUT
SILICON RFIC
= 3.0 V, Z
UNITS
dBm
dBc
mA
dB
dB
dB
dB
dB
L
= Z
California Eastern Laboratories
+20
+10
-10
+20
+10
-10
0
0
Tuned at 1 GHz
0.3
Tuned at 1.9 GHz
0.3
S
= 50 Ω, at LC matched frequency)
INSERTION POWER GAIN vs.
FREQUENCY AND VOLTAGE
12.0
33.0
29.0
MIN
-1.0
-3.0
2.8
9.5
2.0
1.0
Frequency, f (GHz)
Frequency, f (GHz)
V
CC
V
CC
= 3.3 V
= 3.0 V
1.0
UPC8151TB
1.0
UPC8151TB
V
CC
V
-62.0
SO6
TYP
12.5
15.0
38.0
34.0
+2.5
+0.5
10.0
12.0
CC
= 3.0 V V
4.2
6.0
6.0
5.0
4.0
54.0
= 3.3 V
CC
= 2.4 V
3.0
3.0
MAX
14.5
17.0
5.8
7.5
7.5

Related parts for UPC8151TB-E3

UPC8151TB-E3 Summary of contents

Page 1

... TYP @ GHz P • OPERATING FREQUENCY: 100 MHz to 1900 MHz (Output port LC matching) • EXCELLENT ISOLATION: UPC8151TB; ISOL = 38 dB TYP @ GHz • HIGH DENSITY SURFACE MOUNTING: 6 pin super minimold or SOT-363 package DESCRIPTION NEC's UPC8151TB is a silicon RFIC designed as a buffer amplifier for cellular or cordless telephones. This low current amplifier operates on 3 ...

Page 2

... Ground pin. This pin should be connected to system ground with minimum inductance. Ground pattern on the board should be formed as wide as possible. All the ground pins must be connected together with wide ground pattern to minimize impedance difference. PARAMETERS UNITS MIN Supply Voltage V 2.4 ...

Page 3

... TYPICAL APPLICATION EXAMPLE Location Examples in Digital Cellular PRODUCT LINE- +25 ° PARAMETER PART NO. Icc (mA) UPC8128TB 2.8 UPC8151TB 4.5 UPC8152TB 5.6 TYPICAL PERFORMANCE CURVES CIRCUIT CURRENT vs. VOLTAGE 6 No Signals Supply Voltage VCO N PLL = 3 Ω OUTPUT PORT MATCHING FREQUENCY 1 GHz 1.9 GHz G ISOL P G ISOL ...

Page 4

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 +10 0 -10 -20 -30 -40 -50 0.1 0.3 Frequency, f (GHz) ISOLATION vs. FREQUENCY AND VOLTAGE -30 -40 - 3.0 V ...

Page 5

TYPICAL PERFORMANCE CURVES 1.0 GHz OUTPUT PORT MATCHING OUTPUT RETURN LOSS vs. FREQUENCY AND VOLTAGE +10 0 -10 -20 -30 0.1 1.0 0.3 Frequency, f (GHz) OUTPUT POWER vs. INPUT POWER AND VOLTAGE + ...

Page 6

TYPICAL PERFORMANCE CURVES 1.0 GHz Output Port Matching NOISE FIGURE vs. VOLTAGE 7.5 7.0 6.5 6.0 5.5 5.0 4.5 2.0 2.5 3.0 Voltage, V (V) CC 1.9 GHz Output Port Matching INSERTION POWER GAIN vs. FREQUENCY AND VOLTAGE +20 V ...

Page 7

TYPICAL PERFORMANCE CURVES 1.9 GHz Output Port Matching OUTPUT POWER vs. INPUT POWER AND VOLTAGE + 3 -10 -15 -20 -25 -30 -40 -35 -30 -25 -20 -15 Input Power 3RD ...

Page 8

TYPICAL SCATTERING PARAMETERS 3 —Frequency 3 4 OUT CC FREQUENCY S 11 MHz MAG ANG 100 .843 -16.0 200 .752 -27.1 300 .666 -32.4 400 .603 ...

Page 9

... PACKAGE OUTLINE SO6 2.1±0.1 1.25±0.1 2.0±0.2 0.65 1.3 0.65 0.9 ± 0.1 0.7 0 ~0.1 ORDERING INFORMATION PART NUMBER QUANTITY UPC8151TB-E3-A 3K/Reel Note: Embossed tape wide. Pins 1, 2 and 3 face perforated side of tape. TEST CIRCUIT V CC Output Port Match 6 50Ω ...

Page 10

Subject: Compliance with EU Directives CEL certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of European Union (EU) Directive 2002/95/EC Restriction on Use of Hazardous Substances in electrical and electronic equipment (RoHS) ...

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