UPC2747T-E3 NEC, UPC2747T-E3 Datasheet

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UPC2747T-E3

Manufacturer Part Number
UPC2747T-E3
Description
RF Amplifier REORD 551-UPC2747TB SO-6 MMIC AMPLIFIER
Manufacturer
NEC
Datasheet
1.UPC2747T-E3.pdf (5 pages)

Specifications of UPC2747T-E3

Lead Free Status / RoHS Status
Lead free / RoHS Compliant

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Company:
Bonase Electronics (HK) Co., Limited Bonase Electronics (HK) Co., Limited
Part Number:
UPC2747T-E3
Manufacturer:
NEC
Quantity:
13 520
DESCRIPTION
• LOW VOLTAGE - LOW CURRENT: 5 mA at 3 V
• LOW POWER CONSUMPTION: 15 mW TYP
• SUPER SMALL PACKAGE
• TAPE AND REEL PACKAGING OPTION AVAILABLE
ELECTRICAL CHARACTERISTICS
Note:
1.The gain at f
FEATURES
The UPC2747T is a Silicon Monolithic integrated circuit which
is manufactured using the NESAT III process. The NESAT III
process produces transistors with f
This amplifier was designed for 900 MHz receivers in cellular
and cordless telephone applications. Operating on a 3 volt
supply (1.8 volt minimum) this IC is ideally suited for hand-
held, portable designs.
NEC's stringent quality assurance and test procedures en-
sure the highest reliability and performance.
SYMBOLS
R
RL
ISOL
P
RL
OIP
TH (J-A)
I
NF
G
f
CC
SAT
U 1
OUT
S
IN
3
U
Circuit Current (no signal)
Small Signal Gain,
Upper Limit Operating Frequency, V
Saturated Output Power,
Noise Figure,
Input Return Loss,
Output Return Loss,
Isolation,
SSB Output Third Order Intercept
Thermal Resistance (Junction to Ambient)
is 3 dB down from the gain at 100 MHz.
Free Air
Mounted on a 50 x 50 x 1.6 mm epoxy glass PWB
PARAMETERS AND CONDITIONS
T
PACKAGE OUTLINE
approaching 20 GHz.
PART NUMBER
, f1 = 500 MHz, f2 = 510 MHz, V
V
V
f = 900 MHz, V
f = 900 MHz, V
f = 900 MHz, , V
f = 900 MHz, V
f = 900 MHz, V
f = 900 MHz, V
f = 900 MHz, V
f = 900 MHz, V
f = 900 MHz, V
f = 900 mHz, V
f = 900 MHz, V
f = 900 MHz, V
f1 = 900 MHz, f2 = 902 MHz, V
f1 = 1000 MHz, f2 = 1010 MHz, V
f1 = 900 MHz, f2 = 902 MHz, V
CC
CC
V
CC
= 3.0 V
= 1.8 V
CC
= 1.8 V
= 3.0 V
(T
A
= 25 C, Z
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
CC
Si MMIC AMPLIFIER
CC
= 3.0 V
= 1.8 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
= 1.8 V
= 3.0 V
L
= Z
S
= 50 )
CC
CC
CC
3 V, 900 MHz
CC
= 3.0 V
= 3.0 V
= 1.8 V
= 3.0 V
12
14
10
8
0
California Eastern Laboratories
UNITS
dBm
dBm
dBm
dBm
dBm
dBm
GHz
GHz
mA
mA
C/W
C/W
dB
dB
dB
dB
dB
dB
dB
dB
dB
dB
GAIN vs. FREQUENCY
V
NOISE FIGURE AND
CC
Frequency, f (MHz)
= 3.0 V, I
NF
G
S
MIN
-9.5
1000
3.8
1.5
11
35
9
7
CC
= 5 mA
UPC2747T
UPC2747T
TO6
TYP
5.0
3.0
5.5
1.8
1.8
-14
3.3
5.2
-10
12
14
11
10
13
40
34
-7
-3
-3
-2
2000
4.5
4.0
3.5
3.0
MAX
7.0
4.5
14
620
230

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UPC2747T-E3 Summary of contents

Page 1

... SUPER SMALL PACKAGE • TAPE AND REEL PACKAGING OPTION AVAILABLE DESCRIPTION The UPC2747T is a Silicon Monolithic integrated circuit which is manufactured using the NESAT III process. The NESAT III process produces transistors with f This amplifier was designed for 900 MHz receivers in cellular and cordless telephone applications ...

Page 2

ABSOLUTE MAXIMUM RATINGS SYMBOLS PARAMETERS V Supply Voltage CC I Total Supply Current CC P Input Power IN P Total Power Dissipation Operating Temperature OP T Storage Temperature STG Notes: 1. Operation in excess of any one ...

Page 3

TYPICAL PERFORMANCE CURVES RETURN LOSS vs. FREQUENCY 0 RLout ( RLin (V 10 RLout (V 20 RLin ( 0.3 0.6 0.9 1.2 1.5 1.8 Frequency, f (GH POWER vs. ...

Page 4

TYPICAL SCATTERING PARAMETERS FREQUENCY S 11 (GHz) MAG ANG 0.1 0.061 -175.8 0.2 0.075 -168.9 0.3 0.093 -167.4 0.4 0.117 -174.1 0.5 0.134 175.3 0.6 0.142 163.9 0.7 0.152 153.7 ...

Page 5

... All dimensions are typical unless otherwise specified. EQUIVALENT CIRCUIT IN ORDERING INFORMATION PART NUMBER UPC2747T-E3 Note: Embossed Tape wide. EXCLUSIVE NORTH AMERICAN AGENT FOR CALIFORNIA EASTERN LABORATORIES • Headquarters • 4590 Patrick Henry Drive • Santa Clara, CA 95054-1817 • (408) 988-3500 • Telex 34-6393 • FAX (408) 988-0279 24-Hour Fax-On-Demand: 800-390-3232 (U.S. and Canada only) • ...

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