BGA2011 T/R NXP Semiconductors, BGA2011 T/R Datasheet - Page 4
![RF Amplifier TAPE-7 MMIC-RFS](/photos/16/0/160094/sot363_sml.jpg)
BGA2011 T/R
Manufacturer Part Number
BGA2011 T/R
Description
RF Amplifier TAPE-7 MMIC-RFS
Manufacturer
NXP Semiconductors
Type
Low Noise Wideband Amplifierr
Datasheet
1.BGA2011115.pdf
(12 pages)
Specifications of BGA2011 T/R
Operating Frequency
0.9 GHz
Noise Figure
1.5 dB
Operating Supply Voltage
3 V
Supply Current
15 mA
Maximum Power Dissipation
135 mW
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-363
Number Of Channels
1 Channel
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
BGA2011,115
NXP Semiconductors
APPLICATION INFORMATION
List of components (see Fig.2)
Note
1. The stripline (w = 0.7 mm) is on a gold plated double copper-clad printed-circuit board (
2000 Dec 04
handbook, full pagewidth
C1, C2
C3, C5
C4
C6
L1
L2
COMPONENT
900 MHz high linear low noise amplifier
board thickness = 0.64 mm, copper thickness = 35 m, gold thickness = 5 m.
RF in
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
multilayer ceramic chip capacitor
SMD inductor
SMD inductor
V C
C1
DESCRIPTION
L1
C6
V C
C5
IN
SOT363
CIRCUIT
BIAS
Fig.2 Application circuit.
stripline
V S
APPLICATION
4
GND
TYPICAL
OUT
100 pF
5.6 pF
22 nF
C4
L2
C2
C3
APPLICATION
2 x 100 nF
HIGH IP3
V S
RF out
MLD480
100 pF
8.2 nH
5.6 pF
10 nH
22 nF
r
= 6.15),
Product specification
DIMENSIONS
BGA2011
0603
0603
0603
0805
0603
0603