BGA2011 T/R NXP Semiconductors, BGA2011 T/R Datasheet - Page 6

• Manufacturer Part Number: BGA2011 T/R
• Description: RF Amplifier TAPE-7 MMIC-RFS
• Manufacturer: NXP Semiconductors
• Type: Low Noise Wideband Amplifierr

Specifications of BGA2011 T/R

• Operating Frequency: 0.9 GHz
• Noise Figure: 1.5 dB
• Operating Supply Voltage: 3 V
• Supply Current: 15 mA
• Maximum Power Dissipation: 135 mW
• Maximum Operating Temperature: + 150 C
• Mounting Style: SMD/SMT
• Package / Case: SOT-363
• Number Of Channels: 1 Channel
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: BGA2011,115

NXP Semiconductors
Scattering parameters
V
2000 Dec 04
handbook, halfpage
(MHz)
S
1000
1200
1400
1600
1800
2000
2200
2400
2600
2800
3000
100
200
400
600
800
900 MHz high linear low noise amplifier
= V
V
f
S
(dB)
= V
Fig.7
NF
C
1.6
1.2
0.8
0.4
2
0
C
= 3 V; P
5
= 3 V; f = 900 MHz
MAGNITUDE
Noise figure as a function of supply
current; typical values.
(ratio)
0.553
0.499
0.394
0.331
0.295
0.276
0.267
0.262
0.270
0.287
0.309
0.339
0.360
0.390
0.398
0.392
D
= 30 dBm; Z
s
11
ANGLE
22.45
42.12
71.44
90.58
104.0
124.2
134.2
144.2
114.9
152.7
159.7
166.2
172.0
175.9
178.0
173.9
10
(deg)
o
= 50 ; T
I S (mA)
MAGNITUDE
16.198
14.354
10.688
(ratio)
8.156
6.512
5.415
4.640
4.112
3.659
3.336
3.045
2.849
2.680
2.511
2.332
2.108
amb
MLD485
= 25 C
15
s
21
ANGLE
(deg)
160.5
145.4
124.6
112.2
103.9
97.72
93.01
89.10
85.21
82.21
78.21
73.94
69.19
64.60
59.20
56.72
6
MAGNITUDE
(ratio)
0.006
0.012
0.018
0.021
0.024
0.027
0.032
0.037
0.043
0.049
0.057
0.066
0.076
0.086
0.094
0.099
s
12
ANGLE
76.72
67.53
59.55
58.29
60.91
64.65
69.04
73.22
75.43
77.84
78.60
77.96
75.04
74.92
69.95
69.12
(deg)
MAGNITUDE
(ratio)
0.184
0.256
0.283
0.293
0.298
0.304
0.310
0.309
0.312
0.304
0.291
0.292
0.278
0.317
0.115
0.311
Product specification
BGA2011
s
22
ANGLE
87.98
113.5
141.2
158.1
170.5
178.7
169.5
162.5
157.0
152.7
150.5
149.6
151.4
149.2
148.4
140.0
(deg)