BC857AW,135 NXP Semiconductors, BC857AW,135 Datasheet - Page 4
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BC857AW,135
Manufacturer Part Number
BC857AW,135
Description
TRANSISTOR PNP 45V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BC856AW135.pdf
(10 pages)
Specifications of BC857AW,135
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934021840135
BC857AW /T3
BC857AW /T3
BC857AW /T3
BC857AW /T3
NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2002 Feb 04
I
I
h
V
V
V
C
C
f
F
amb
CBO
EBO
T
FE
CEsat
BEsat
BE
PNP general purpose transistors
c
e
SYMBOL
= 25 °C; unless otherwise specified.
p
≤ 300 μs; δ ≤ 0.02.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
BC856W
BC857W; BC858W
BC856AW; BC857AW
BC856BW; BC857BW
BC857CW
PARAMETER
V
V
T
V
I
I
I
note 1
I
I
note 1
I
I
V
f = 1 MHz
V
f = 1 MHz
V
f = 100 MHz
I
R
B = 200 Hz
C
C
C
C
C
C
C
C
j
4
CB
CB
EB
CB
EB
CE
S
= 150 °C
= −2 mA; V
= −10 mA; I
= −100 mA; I
= −10 mA; I
= −100 mA; I
= −2 mA; V
= −10 mA; V
= −200 μA; V
= 2 kΩ; f = 1 kHz;
= −5 V; I
= −0.5 V; I
= −30 V; I
= −30 V; I
= −10 V; I
= −5 V; I
CONDITIONS
C
C
CE
CE
E
E
B
B
E
BC856W; BC857W; BC858W
= 0
C
= −10 mA;
CE
B
B
CE
= 0
= 0;
= −0.5 mA −
= −0.5 mA −
= I
= I
= −5 V
= −5 V
= −5 mA;
= −5 mA;
= −5 V
e
= −5 V;
c
= 0;
= 0;
−
−
−
125
125
125
220
420
−
−
−600
−
−
−
100
−
MIN.
−1
−
−
−
−
−
−
−
−75
−250
−700
−850
−650
−
−
−
−
−
TYP.
Product data sheet
−15
−4
−100
475
800
250
475
800
−300
−600
−
−
−750
−820
3
12
−
10
MAX.
nA
μA
nA
mV
mV
mV
mV
mV
mV
pF
pF
MHz
dB
UNIT