BC857AW,135 NXP Semiconductors, BC857AW,135 Datasheet - Page 6
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BC857AW,135
Manufacturer Part Number
BC857AW,135
Description
TRANSISTOR PNP 45V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet
1.BC856AW135.pdf
(10 pages)
Specifications of BC857AW,135
Transistor Type
PNP
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
125 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934021840135
BC857AW /T3
BC857AW /T3
BC857AW /T3
BC857AW /T3
NXP Semiconductors
2002 Feb 04
handbook, halfpage
handbook, halfpage
PNP general purpose transistors
V CEsat
BC857BW; V
(1) T
(2) T
(3) T
Fig.6
BC857BW; I
(1) T
(2) T
(3) T
Fig.8
(mV)
h FE
1000
−10
−10
−10
800
600
400
200
−10
−10
−10
amb
amb
amb
amb
amb
amb
0
4
3
2
−1
−2
= 150 °C.
= 25 °C.
= −55 °C.
= 150 °C.
= 25 °C.
= −55 °C.
DC current gain as a function of collector
current; typical values.
Collector-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
−10
= −5 V.
= 20.
−1
−1
(1)
(3)
(2)
−1
(1)
(2)
(3)
−10
−10
−10
−10
2
I C (mA)
I C (mA)
2
MGT715
MGT717
−10
−10
3
3
6
handbook, halfpage
handbook, halfpage
V BEsat
(mV)
V BE
(mV)
BC857BW; V
(1) T
(2) T
(3) T
Fig.7
BC857BW; I
(1) T
(2) T
(3) T
Fig.9
−1000
−1200
−1200
−1000
−800
−600
−400
−200
−800
−600
−400
−200
−10
−10
amb
amb
amb
amb
amb
amb
0
0
−2
−1
BC856W; BC857W; BC858W
= −55 °C.
= 25 °C.
= 150 °C.
= −55 °C.
= 25 °C.
= 150 °C.
Base-emitter voltage as a function of
collector current; typical values.
Base-emitter saturation voltage as a
function of collector current; typical values.
C
CE
/I
B
−10
= −5 V.
= 20.
−1
−1
(1)
(2)
(3)
−1
(1)
(2)
(3)
−10
−10
−10
Product data sheet
−10
2
I C (mA)
I C (mA)
2
MGT716
MGT718
−10
−10
3
3