BC849BW,135 NXP Semiconductors, BC849BW,135 Datasheet - Page 2

TRANSISTOR NPN 30V 100MA SOT323

BC849BW,135

Manufacturer Part Number
BC849BW,135
Description
TRANSISTOR NPN 30V 100MA SOT323
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC849BW,135

Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
30V
Vce Saturation (max) @ Ib, Ic
600mV @ 5mA, 100mA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 2mA, 5V
Power - Max
200mW
Frequency - Transition
100MHz
Mounting Type
Surface Mount
Package / Case
SC-70-3, SOT-323-3
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Other names
934022020135
BC849BW /T3
BC849BW /T3
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 45 V).
APPLICATIONS
• Low noise stages in tape recorders, hi-fi amplifiers and
DESCRIPTION
NPN transistor in a SOT323 plastic package.
PNP complements: BC859W and BC860W.
MARKING
Note
1. ∗ = - : Made in Hong Kong.
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
1999 Apr 12
BC849BW
BC849CW
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
other audio-frequency equipment.
NUMBER
stg
j
amb
CBO
CEO
EBO
tot
NPN general purpose transistors
∗ = t : Made in Malaysia.
TYPE
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
MARKING
BC849W
BC850W
BC849W
BC850W
CODE
2B∗
2C∗
(1)
PARAMETER
BC850BW
BC850CW
NUMBER
TYPE
MARKING
CODE
2G∗
2F∗
open emitter
open base
open collector
T
(1)
amb
≤ 25 °C; note 1
2
CONDITIONS
PINNING
handbook, halfpage
Fig.1
PIN
1
2
3
Simplified outline (SOT323) and symbol.
Top view
base
emitter
collector
1
3
−65
−65
BC849W; BC850W
MIN.
DESCRIPTION
2
MAM062
30
50
30
45
5
100
200
200
200
+150
150
+150
Product data sheet
MAX.
1
3
2
V
V
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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