BC849BW,135 NXP Semiconductors, BC849BW,135 Datasheet - Page 3

• Manufacturer Part Number: BC849BW,135
• Description: TRANSISTOR NPN 30V 100MA SOT323
• Manufacturer: NXP Semiconductors

Specifications of BC849BW,135

• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 600mV @ 5mA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 2mA, 5V
• Power - Max: 200mW
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Package / Case: SC-70-3, SOT-323-3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Other names: 934022020135; BC849BW /T3; BC849BW /T3

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
Note
1. Pulse test: t
1999 Apr 12
R
I
I
h
V
V
C
C
f
F
amb
CBO
EBO
T
SYMBOL
SYMBOL
FE
CEsat
BE
NPN general purpose transistors
th j-a
c
e
= 25 °C unless otherwise specified.
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
p
BC849BW; BC850BW
BC849CW; BC850CW
≤ 300 μs; δ ≤ 0.02.
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
f = 10 Hz to 15.7 kHz
I
f = 1 kHz; B = 200 Hz
E
E
C
C
C
C
C
C
E
C
C
C
C
= 0; V
= 0; V
= 0; V
= 10 mA; I
= 100 mA; I
= 2 mA; V
= 10 mA; V
= i
= i
= 10 mA; V
= 200 μA; V
= 200 μA; V
= 2 mA; V
e
c
= 0; V
= 0; V
CB
CB
EB
= 30 V
= 30 V; T
= 5 V
CONDITIONS
CB
EB
CE
CE
B
CE
CE
3
B
CE
CE
= 0.5 mA
= 10 V; f = 1 MHz
= 500 mV; f = 1 MHz
= 5 V
= 5 V; see Figs 2 and 3
= 5 mA; note 1
= 5 V
= 5 V; f = 100 MHz
= 5 V; R
= 5 V; R
note 1
j
= 150 °C
CONDITIONS
S
S
= 2 kΩ;
= 2 kΩ;
−
−
−
200
420
−
−
580
−
−
−
100
−
−
MIN.
BC849W; BC850W
VALUE
625
−
−
−
−
−
−
−
−
−
−
11
−
−
−
TYP.
Product data sheet
15
5
100
450
800
250
600
700
770
3
−
−
4
4
MAX.
UNIT
K/W
nA
μA
nA
mV
mV
mV
mV
pF
pF
MHz
dB
dB
UNIT