BC860B,215 NXP Semiconductors, BC860B,215 Datasheet

TRANSISTOR PNP 45V 100MA SOT23

BC860B,215

Manufacturer Part Number
BC860B,215
Description
TRANSISTOR PNP 45V 100MA SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BC860B,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Mounting Type
Surface Mount
Power - Max
250mW
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
45V
Transistor Type
PNP
Frequency - Transition
100MHz
Dc Current Gain (hfe) (min) @ Ic, Vce
220 @ 2mA, 5V
Vce Saturation (max) @ Ib, Ic
650mV @ 5mA, 100mA
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
PNP
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
45 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
250 mW
Maximum Operating Frequency
100 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
45V
Collector-base Voltage
50V
Emitter-base Voltage
5V
Collector Current (dc) (max)
100mA
Dc Current Gain (min)
220
Frequency (max)
100MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933589850215::BC860B T/R::BC860B T/R
Product data sheet
Supersedes data of 1999 May 28
DATA SHEET
BC859; BC860
PNP general purpose transistors
DISCRETE SEMICONDUCTORS
2004 Jan 16

Related parts for BC860B,215

BC860B,215 Summary of contents

Page 1

DATA SHEET BC859; BC860 PNP general purpose transistors Product data sheet Supersedes data of 1999 May 28 DISCRETE SEMICONDUCTORS 2004 Jan 16 ...

Page 2

... NXP Semiconductors PNP general purpose transistors FEATURES • Low current (max. 100 mA) • Low voltage (max. 45 V). APPLICATIONS • Low noise input stages of audio frequency equipment. DESCRIPTION PNP transistor in a SOT23 plastic package. NPN complements: BC849 and BC850. MARKING TYPE MARKING ...

Page 3

... NXP Semiconductors PNP general purpose transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BC859 BC860 V collector-emitter voltage CEO BC859 BC860 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors PNP general purpose transistors CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE BC859B; BC860B BC859C; BC860C V collector-emitter saturation CEsat voltage V base-emitter saturation voltage BEsat V base-emitter voltage BE C collector capacitance ...

Page 5

... NXP Semiconductors PNP general purpose transistors 400 handbook, full pagewidth h FE 300 200 100 0 −2 −1 −10 −10 BC859B; BC860B. 600 handbook, full pagewidth h FE 500 400 300 200 100 0 −2 −1 −10 −10 BC859C; BC860C. 2004 Jan −5 V −1 −10 Fig.2 DC current gain ...

Page 6

... NXP Semiconductors PNP general purpose transistors PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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