BC860B,215 NXP Semiconductors, BC860B,215 Datasheet - Page 5

• Manufacturer Part Number: BC860B,215
• Description: TRANSISTOR PNP 45V 100MA SOT23
• Manufacturer: NXP Semiconductors

Specifications of BC860B,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Mounting Type: Surface Mount
• Power - Max: 250mW
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 45V
• Transistor Type: PNP
• Frequency - Transition: 100MHz
• Dc Current Gain (hfe) (min) @ Ic, Vce: 220 @ 2mA, 5V
• Vce Saturation (max) @ Ib, Ic: 650mV @ 5mA, 100mA
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 45 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 45V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 100mA
• Dc Current Gain (min): 220
• Frequency (max): 100MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933589850215::BC860B T/R::BC860B T/R

NXP Semiconductors
2004 Jan 16
handbook, full pagewidth
handbook, full pagewidth
PNP general purpose transistors
BC859B; BC860B.
BC859C; BC860C.
h FE
h FE
400
300
200
100
600
500
400
300
200
100
−10
−10
0
0
−2
−2
−10
−10
−1
−1
Fig.2 DC current gain; typical values.
Fig.3 DC current gain; typical values.
−1
−1
5
−10
−10
V CE = −5 V
V CE = −5 V
−10
−10
2
2
BC859; BC860
I C (mA)
I C (mA)
Product data sheet
MBH727
MBH728
−10
−10
3
3