PMBT2369,215 NXP Semiconductors, PMBT2369,215 Datasheet

TRANS NPN SW 200MA 15V SOT23

PMBT2369,215

Manufacturer Part Number
PMBT2369,215
Description
TRANS NPN SW 200MA 15V SOT23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of PMBT2369,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
200mA
Voltage - Collector Emitter Breakdown (max)
15V
Vce Saturation (max) @ Ib, Ic
250mV @ 1mA, 10mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
15 V
Emitter- Base Voltage Vebo
5 V
Maximum Dc Collector Current
0.2 A
Power Dissipation
250 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Number Of Elements
1
Collector-emitter Voltage
15V
Collector-base Voltage
40V
Emitter-base Voltage
5V
Collector Current (dc) (max)
200mA
Dc Current Gain (min)
40
Frequency (max)
500MHz
Operating Temp Range
-65C to 150C
Operating Temperature Classification
Military
Mounting
Surface Mount
Pin Count
3
Package Type
TO-236AB
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1739-2
933828890215
PMBT2369 T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PMBT2369,215
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
Product data sheet
Supersedes data of 1999 Apr 27
DATA SHEET
PMBT2369
NPN switching transistor
DISCRETE SEMICONDUCTORS
2004 Jan 22

Related parts for PMBT2369,215

PMBT2369,215 Summary of contents

Page 1

DATA SHEET PMBT2369 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 27 DISCRETE SEMICONDUCTORS 2004 Jan 22 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • Low current (max. 200 mA) • Low voltage (max. 15 V). APPLICATIONS • High-speed switching, especially in portable equipment. DESCRIPTION NPN switching transistor in a SOT23 plastic package. MARKING TYPE NUMBER PMBT2369 Note Made in Hong Kong Made in Malaysia. ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation voltage ...

Page 4

... NXP Semiconductors NPN switching transistor handbook, full pagewidth = 0 500 µ µ Ω kΩ kΩ 0 2 Ω. Oscilloscope input impedance Z i 2004 Jan (probe) oscilloscope 450 Ω ≤ 270 Ω. Fig.2 Test circuit for switching times (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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