PMBT2369,215 NXP Semiconductors, PMBT2369,215 Datasheet - Page 2

• Manufacturer Part Number: PMBT2369,215
• Description: TRANS NPN SW 200MA 15V SOT23
• Manufacturer: NXP Semiconductors

Specifications of PMBT2369,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: NPN
• Current - Collector (ic) (max): 200mA
• Voltage - Collector Emitter Breakdown (max): 15V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 10mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 500MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 15 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.2 A
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 500 MHz
• Maximum Operating Temperature: + 150 C
• Number Of Elements: 1
• Collector-emitter Voltage: 15V
• Collector-base Voltage: 40V
• Emitter-base Voltage: 5V
• Collector Current (dc) (max): 200mA
• Dc Current Gain (min): 40
• Frequency (max): 500MHz
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Package Type: TO-236AB
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 568-1739-2; 933828890215; PMBT2369 T/R

NXP Semiconductors
FEATURES
• Low current (max. 200 mA)
• Low voltage (max. 15 V).
APPLICATIONS
• High-speed switching, especially in portable equipment.
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Transistor mounted on an FR4 printed-circuit board.
2004 Jan 22
PMBT2369
PMBT2369
V
V
V
I
I
I
P
T
T
T
C
CM
BM
NUMBER
SYMBOL
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
* = t : Made in Malaysia.
* = W : Made in China.
TYPE
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
−
PARAMETER
plastic surface mounted package; 3 leads
MARKING CODE
*1J
(1)
open emitter
open base
open collector
T
amb
DESCRIPTION
2
≤ 25 °C; note 1
PACKAGE
PINNING
handbook, halfpage
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
−
−
−
−
−
−
−
−65
−
−65
MIN.
MAM255
Product data sheet
PMBT2369
1
40
15
5
200
300
100
250
+150
150
+150
MAX.
VERSION
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT