BSS63,215 NXP Semiconductors, BSS63,215 Datasheet - Page 2

• Manufacturer Part Number: BSS63,215
• Description: TRANS PNP 100V 100MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSS63,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 85MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 100 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 85 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933330390215; BSS63 T/R; BSS63 T/R

NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• High voltage (max. 100 V).
APPLICATIONS
• High-voltage general purpose
• Switching applications.
DESCRIPTION
PNP high-voltage transistor in a SOT23 plastic package.
NPN complement: BSS64.
MARKING
Note
1. ∗ = p : Made in Hong Kong.
ORDERING INFORMATION
2004 Jan 16
BSS63
BSS63
TYPE NUMBER
PNP high-voltage transistor
∗ = t : Made in Malaysia.
∗ = W : Made in China.
TYPE NUMBER
NAME
−
MARKING CODE
plastic surface mounted package; 3 leads
BM∗
(1)
2
PINNING
handbook, halfpage
DESCRIPTION
PACKAGE
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
2
MAM256
Product data sheet
1
VERSION
BSS63
SOT23
3
2