BSS63,215 NXP Semiconductors, BSS63,215 Datasheet - Page 3

• Manufacturer Part Number: BSS63,215
• Description: TRANS PNP 100V 100MA SOT23
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BSS63,215

• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Transistor Type: PNP
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 100V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 2.5mA, 25mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 30 @ 25mA, 1V
• Power - Max: 250mW
• Frequency - Transition: 85MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 30
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 100 V
• Emitter- Base Voltage Vebo: - 6 V
• Continuous Collector Current: - 100 mA
• Maximum Dc Collector Current: - 100 mA
• Power Dissipation: 250 mW
• Maximum Operating Frequency: 85 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933330390215; BSS63 T/R; BSS63 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
THERMAL CHARACTERISTICS
Note
1. Transistor mounted on an FR4 printed-circuit board.
CHARACTERISTICS
T
2004 Jan 16
V
V
V
I
I
I
P
T
T
T
R
I
I
h
V
V
C
f
j
C
CM
BM
CBO
EBO
T
SYMBOL
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
= 25 °C unless otherwise specified.
CEsat
BEsat
PNP high-voltage transistor
th(j-a)
c
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
thermal resistance from junction to ambient
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage
base-emitter saturation voltage
collector capacitance
transition frequency
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
I
I
I
I
f = 100 MHz
E
E
C
C
C
C
C
E
C
open emitter
open base
open collector
T
= 0; V
= 0; V
= i
= 0; V
= −10 mA; V
= −25 mA; V
= −25 mA; I
= −25 mA; I
= −25 mA; V
amb
e
= 0; V
≤ 25 °C
3
CB
CB
EB
note 1
CONDITIONS
= −90 V
= −90 V; T
= −6 V
CONDITIONS
CB
B
B
CE
CE
CE
= −10 V; f = 1 MHz
CONDITIONS
= −2.5 mA
= −2.5 mA
= −1 V
= −1 V
= −5 V;
j
= 150 °C
−
−
−
−
−
−
−
−65
−
−65
−
−
−
30
30
−
−
−
50
MIN.
MIN.
VALUE
500
−
−
−
−
−
−
−
3
85
TYP.
−110
−100
−6
−100
−100
−100
250
+150
150
+150
Product data sheet
MAX.
−100
−50
−100
−
−
−250
−900
−
−
MAX. UNIT
BSS63
UNIT
K/W
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT
nA
µA
nA
mV
mV
pF
MHz