PBSS4160V,115 NXP Semiconductors, PBSS4160V,115 Datasheet
PBSS4160V,115
Specifications of PBSS4160V,115
PBSS4160V T/R
PBSS4160V T/R
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PBSS4160V,115 Summary of contents
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PBSS4160V NPN low V Rev. 03 — 11 December 2009 1. Product profile 1.1 General description Low V CEsat PNP complement: PBSS5160V. 1.2 Features Low collector-emitter saturation voltage V High collector current capability I High efficiency, ...
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... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number Package PBSS4160V 4. Marking Table 4. Type number PBSS4160V PBSS4160V_3 Product data sheet Discrete pinning Description collector base emitter Ordering information Name Description - plastic surface mounted package; 6 leads Marking codes Rev. 03 — 11 December 2009 ...
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... NXP Semiconductors 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated (1) FR4 PCB ...
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... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated (1) (K/W) (2) (3) ( (5) (6) (7) (8) 10 (9) (10) 1 −1 10 −5 − Mounted on FR4 PCB; standard footprint (1) δ (2) δ ...
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... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base CBO cut-off current I collector-emitter CES cut-off current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage V base-emitter BEsat saturation voltage R equivalent CEsat on-resistance V base-emitter BEon turn-on voltage t delay time ...
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... NXP Semiconductors 800 h FE 600 (1) (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 3. DC current gain as a function of collector current; typical values 1 V CEsat (V) −1 10 (1) (2) −2 10 (3) −3 10 − 100 °C (1) T amb = 25 ° ...
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... NXP Semiconductors 1 V CEsat (V) (1) −1 10 (2) −2 10 − °C T amb ( 100 Fig 7. Collector-emitter saturation voltage as a function of collector current; typical values PBSS4160V_3 Product data sheet NPN low V mle129 1.2 V BEsat (V) 0.8 0.4 0 − (mA −55 °C (1) T amb = 25 °C (2) T amb = 100 ° ...
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... NXP Semiconductors 2 (6) (5) (4) (3) ( (A) 1.6 1.2 0.8 0 °C T amb ( ( ( ( ( ( ( ( ( (10 Fig 9. Collector current as a function of collector-emitter voltage; typical values PBSS4160V_3 Product data sheet NPN low V mle131 3 10 (1) R CEsat (Ω (7) (8) (9) 10 (10) 1 −1 10 − ( (1) T amb (2) T amb (3) T amb Fig 10. Equivalent on-resistance as a function of collector current ...
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... NXP Semiconductors Fig 11. BISS transistor switching time definition oscilloscope 0 mA Bon Fig 12. Test circuit for switching times PBSS4160V_3 Product data sheet (probe) o 450 Ω DUT I R1 mlb826 = −25 mA Boff Rev. 03 — 11 December 2009 PBSS4160V NPN low V (BISS) transistor CEsat input pulse ...
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... NXP Semiconductors 8. Package outline Plastic surface-mounted package; 6 leads pin 1 index DIMENSIONS (mm are the original dimensions) UNIT 0.6 0.27 0.18 1.7 mm 0.5 0.17 0.08 1.5 OUTLINE VERSION IEC SOT666 Fig 13. Package outline SOT666 PBSS4160V_3 Product data sheet scale 1.3 1.7 0.3 1.0 ...
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... NXP Semiconductors 9. Packing information Table 8. Packing methods The indicated -xxx are the last three digits of the 12NC ordering code. Type number Package Description PBSS4160V SOT666 4 mm pitch tape and reel [1] For further information and the availability of packing methods, see PBSS4160V_3 Product data sheet ...
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... Revision history Document ID Release date PBSS4160V_3 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Table 2 “Discrete • Figure 13 “Package outline PBSS4160V_2 ...
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... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...
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... NXP Semiconductors 13. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Package outline . . . . . . . . . . . . . . . . . . . . . . . . 10 9 Packing information . . . . . . . . . . . . . . . . . . . . 11 10 Revision history . . . . . . . . . . . . . . . . . . . . . . . . 12 11 Legal information ...