PBSS4160V,115 NXP Semiconductors, PBSS4160V,115 Datasheet - Page 12

• Manufacturer Part Number: PBSS4160V,115
• Description: TRANS NPN 60V 1A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4160V,115

• Package / Case: SS Mini-6 (SOT-666)
• Transistor Type: NPN
• Current - Collector (ic) (max): 900mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 250mV @ 100mA, 1A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 500mA, 5V
• Power - Max: 500mW
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Quad Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 1 A
• Power Dissipation: 500 mW
• Maximum Operating Frequency: 220 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934058118115; PBSS4160V T/R; PBSS4160V T/R

NXP Semiconductors
10. Revision history
Table 9.
PBSS4160V_3
Product data sheet
Document ID
PBSS4160V_3
Modifications:
PBSS4160V_2
PBSS4160V_1
Revision history
20040423
Release date
20091211
20050131
•
•
•
This data sheet was changed to reflect the new company name NXP Semiconductors,
including new legal definitions and disclaimers. No changes were made to the technical
content.
Table 2 “Discrete
Figure 13 “Package outline
Rev. 03 — 11 December 2009
Data sheet status
Product data sheet
Product data sheet
Objective data sheet
pinning”: updated
SOT666”: updated
60 V, 1 A NPN low V
Change notice
-
-
-
PBSS4160V
Supersedes
PBSS4160V_2
PBSS4160V_1
-
CEsat
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
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