BSV52,215 NXP Semiconductors, BSV52,215 Datasheet

TRANSISTOR NPN 12V 100MA SOT-23

BSV52,215

Manufacturer Part Number
BSV52,215
Description
TRANSISTOR NPN 12V 100MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSV52,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933099000215
BSV52 T/R
BSV52 T/R
Product data sheet
Supersedes data of 1999 Apr 15
dbook, halfpage
DATA SHEET
BSV52
NPN switching transistor
DISCRETE SEMICONDUCTORS
M3D088
2004 Jan 14

Related parts for BSV52,215

BSV52,215 Summary of contents

Page 1

DATA SHEET dbook, halfpage BSV52 NPN switching transistor Product data sheet Supersedes data of 1999 Apr 15 DISCRETE SEMICONDUCTORS M3D088 2004 Jan 14 ...

Page 2

... NXP Semiconductors NPN switching transistor FEATURES • Low current (max. 100 mA) • Low voltage (max. 12 V). APPLICATIONS • High speed saturated switching applications, especially in portable equipment. DESCRIPTION NPN switching transistor in a SOT23 plastic package. MARKING TYPE NUMBER BSV52 Note Made in Hong Kong. ...

Page 3

... NXP Semiconductors NPN switching transistor THERMAL CHARACTERISTICS SYMBOL PARAMETER R thermal resistance from junction to ambient th(j-a) Note 1. Transistor mounted on an FR4 printed-circuit board. CHARACTERISTICS = 25 °C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO I emitter cut-off current EBO h DC current gain FE V collector-emitter saturation ...

Page 4

... NXP Semiconductors NPN switching transistor handbook, full pagewidth = 0 4 500 µ µ Ω kΩ kΩ 0 2 Ω. Oscilloscope: input impedance Z i 2004 Jan (probe) oscilloscope 450 Ω ≤ 270 Ω. Fig.2 Test circuit for switching times (probe) oscilloscope 450 Ω ...

Page 5

... NXP Semiconductors NPN switching transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 2004 Jan scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 REFERENCES ...

Page 6

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 7

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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