BSV52,215 NXP Semiconductors, BSV52,215 Datasheet - Page 2

TRANSISTOR NPN 12V 100MA SOT-23

BSV52,215

Manufacturer Part Number
BSV52,215
Description
TRANSISTOR NPN 12V 100MA SOT-23
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BSV52,215

Package / Case
SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
12V
Vce Saturation (max) @ Ib, Ic
400mV @ 5mA, 50mA
Dc Current Gain (hfe) (min) @ Ic, Vce
40 @ 10mA, 1V
Power - Max
250mW
Frequency - Transition
500MHz
Mounting Type
Surface Mount
Dc Collector/base Gain Hfe Min
25
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
12 V
Emitter- Base Voltage Vebo
5 V
Continuous Collector Current
100 mA
Maximum Dc Collector Current
200 mA
Power Dissipation
250 mW
Maximum Operating Frequency
500 MHz
Maximum Operating Temperature
+ 150 C
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
933099000215
BSV52 T/R
BSV52 T/R
NXP Semiconductors
FEATURES
• Low current (max. 100 mA)
• Low voltage (max. 12 V).
APPLICATIONS
• High speed saturated switching applications, especially
DESCRIPTION
NPN switching transistor in a SOT23 plastic package.
MARKING
Note
1. * = p : Made in Hong Kong.
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
2004 Jan 14
BSV52
BSV52
V
V
V
I
I
I
P
T
T
T
C
CM
BM
SYMBOL
TYPE NUMBER
in portable equipment.
stg
j
amb
CBO
CEO
EBO
tot
NPN switching transistor
* = t : Made in Malaysia.
* = W: Made in China.
TYPE NUMBER
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
operating ambient temperature
NAME
PARAMETER
MARKING CODE
plastic surface mounted package; 3 leads
B2*
(1)
open emitter
open base
open collector
T
2
amb
PINNING
DESCRIPTION
handbook, halfpage
≤ 25 °C
PACKAGE
CONDITIONS
PIN
1
2
3
Fig.1 Simplified outline (SOT23) and symbol.
Top view
base
emitter
collector
1
3
DESCRIPTION
−65
−65
MIN.
2
MAM255
Product data sheet
20
12
5
100
200
100
250
+150
150
+150
1
MAX.
VERSION
BSV52
SOT23
3
2
V
V
V
mA
mA
mA
mW
°C
°C
°C
UNIT

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