BFR106T/R NXP Semiconductors, BFR106T/R Datasheet

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BFR106T/R

Manufacturer Part Number
BFR106T/R
Description
Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of BFR106T/R

Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
25@50mA@9V
Maximum Operating Frequency
5000(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
3 V
DISCRETE SEMICONDUCTORS
DATA SHEET
BFR106
NPN 5 GHz wideband transistor
Product specification
September 1995

Related parts for BFR106T/R

BFR106T/R Summary of contents

Page 1

DATA SHEET BFR106 NPN 5 GHz wideband transistor Product specification DISCRETE SEMICONDUCTORS September 1995 ...

Page 2

... NXP Semiconductors NPN 5 GHz wideband transistor DESCRIPTION NPN silicon planar epitaxial transistor in a plastic SOT23 envelope primarily intended for low noise, general RF applications. QUICK REFERENCE DATA SYMBOL PARAMETER V collector-base voltage CBO V collector-emitter voltage CEO I DC collector current C P total power dissipation ...

Page 3

... NXP Semiconductors NPN 5 GHz wideband transistor THERMAL RESISTANCE SYMBOL PARAMETER R thermal resistance from junction to th j-s soldering point Note the temperature at the soldering point of the collector tab. s CHARACTERISTICS = 25 C unless otherwise specified SYMBOL PARAMETER I collector cut-off current CBO h DC current gain ...

Page 4

... NXP Semiconductors NPN 5 GHz wideband transistor 600 1/2 page (Datasheet) P tot (mW) 400 200 100 Fig.2 Power derating curve. 8 handbook, halfpage T f (GHz  500 MHz Fig.4 Transition frequency as a function of collector current. September 1995 MEA398 - 1 handbook, halfpage 150 200 Fig.3 MBB773 ...

Page 5

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth + j –  mA amb = 50  handbook, full pagewidth 180°  mA amb Fig.7 Common emitter forward transmission coefficient (S September 1995 1 0.5 0.2 2000 MHz 1200 1500 1000 800 0.2 0.5 1 500 0 200 100 ...

Page 6

... NXP Semiconductors NPN 5 GHz wideband transistor handbook, full pagewidth 180°  mA amb Fig.8 Common emitter reverse transmission coefficient (S handbook, full pagewidth + j –  mA amb = 50  Fig.9 Common emitter output reflection coefficient (S September 1995 90° 120° 2000 MHz 150° ...

Page 7

... NXP Semiconductors NPN 5 GHz wideband transistor PACKAGE OUTLINE Plastic surface-mounted package; 3 leads DIMENSIONS (mm are the original dimensions UNIT max. 1.1 0.48 0.15 mm 0.1 0.9 0.38 0.09 OUTLINE VERSION IEC SOT23 September 1995 scale 3.0 1.4 2.5 1.9 0.95 2.8 1.2 2.1 ...

Page 8

... In no event shall NXP Semiconductors be liable for any indirect, incidental, punitive, special or consequential damages (including - without limitation - lost profits, lost savings, business interruption, costs related to the ...

Page 9

... NXP Semiconductors’ specifications such use shall be solely at customer’s own risk, and (c) customer fully indemnifies NXP Semiconductors for any liability, damages or failed product claims resulting from customer design and use of the product for automotive applications beyond NXP Semiconductors’ ...

Page 10

... Interface, Security and Digital Processing expertise Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. ...

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