BFR106T/R NXP Semiconductors, BFR106T/R Datasheet - Page 3

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BFR106T/R

Manufacturer Part Number
BFR106T/R
Description
Trans GP BJT NPN 15V 0.1A 3-Pin TO-236AB T/R
Manufacturer
NXP Semiconductors
Type
NPNr
Datasheet

Specifications of BFR106T/R

Package
3TO-236AB
Supplier Package
TO-236AB
Pin Count
3
Minimum Dc Current Gain
25@50mA@9V
Maximum Operating Frequency
5000(Typ) MHz
Maximum Dc Collector Current
0.1 A
Maximum Collector Base Voltage
20 V
Maximum Collector Emitter Voltage
15 V
Maximum Emitter Base Voltage
3 V
NXP Semiconductors
THERMAL RESISTANCE
Note
1. T
CHARACTERISTICS
T
Notes
1. G
2. I
3. d
September 1995
I
h
f
C
C
C
G
F
d
V
R
j
CBO
T
FE
2
SYMBOL
SYMBOL
= 25 C unless otherwise specified.
o
th j-s
c
e
re
NPN 5 GHz wideband transistor
UM
f
C
(pq)
G
im
s
UM
= 30 mA; V
UM
is the temperature at the soldering point of the collector tab.
= 60 dB (DIN 45004B); I
is the maximum unilateral power gain, assuming S
= 810 MHz; V
=
10 log
thermal resistance from junction to
soldering point
collector cut-off current
DC current gain
transition frequency
collector capacitance
emitter capacitance
feedback capacitance
maximum unilateral power gain
(note 1)
noise figure
second order intermodulation
distortion
output voltage
CE
--------------------------------------------------------- - dB.
= 6 V; R
1
o
PARAMETER
= 100 mV.
S
PARAMETER
11
S
L
2
 1
21
= 75 ; T
2
C
= 50 mA; V
S
22
amb
2
= 25 C;
CE
I
I
I
T
I
I
I
I
T
I
T
note 2
note 3
= 9 V; R
E
C
C
E
C
C
C
C
amb
amb
amb
= 0; V
= i
= 50 mA; V
= 50 mA; V
= i
= 0; V
= 30 mA; V
= 30 mA; V
up to T
e
c
= 25 C
= 25 C
= 25 C
= 0; V
= 0; V
L
CB
CE
3
= 75 ; T
12
s
= 10 V
= 10 V; f = 1 MHz
CONDITIONS
CB
EB
= 70 C; note 1
is zero and
CE
CE
CE
CE
CONDITIONS
= 0.5 V; f = 1 MHz
= 10 V; f = 1 MHz
= 9 V
= 9 V; f = 500 MHz;
= 6 V; f = 800 MHz;
= 6 V; f = 800 MHz;
amb
= 25 C; f
(pqr)
= 793.25 MHz.
25
MIN.
THERMAL RESISTANCE
80
5
1.5
4.5
1.2
11.5
3.5
50
350
TYP. MAX.
Product specification
210 K/W
BFR106
100
nA
GHz
pF
pF
pF
dB
dB
dB
mV
UNIT

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