PBSS4220V,115 NXP Semiconductors, PBSS4220V,115 Datasheet

TRANS NPN 20V 2A LOW SAT SOT666

PBSS4220V,115

Manufacturer Part Number
PBSS4220V,115
Description
TRANS NPN 20V 2A LOW SAT SOT666
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PBSS4220V,115

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
20V
Vce Saturation (max) @ Ib, Ic
350mV @ 200mA, 2A
Current - Collector Cutoff (max)
100nA
Dc Current Gain (hfe) (min) @ Ic, Vce
200 @ 1A, 2V
Power - Max
900mW
Frequency - Transition
210MHz
Mounting Type
Surface Mount
Package / Case
SS Mini-6 (SOT-666)
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Other names
934059259115
PBSS4220V T/R
PBSS4220V T/R
1. Product profile
1.1 General description
1.2 Features
1.3 Applications
1.4 Quick reference data
NPN low V
Mounted Device (SMD) plastic package.
PNP complement: PBSS5220V.
Table 1.
[1]
Symbol Parameter
V
I
I
R
C
CM
CEO
CEsat
PBSS4220V
20 V, 2 A NPN low V
Rev. 02 — 11 December 2009
Low collector-emitter saturation voltage V
High collector current capability: I
High collector current gain (h
High efficiency due to less heat generation
Smaller required Printed-Circuit Board (PCB) area than for conventional transistors
DC-to-DC conversion
MOSFET gate driving
Motor control
Charging circuits
Low power switches (e.g. motors, fans)
Portable applications
Pulse test: t
collector-emitter voltage
collector current
peak collector current
collector-emitter
saturation resistance
Quick reference data
CEsat
p
≤ 300 μs; δ ≤ 0.02.
Breakthrough In Small Signal (BISS) transistor in a SOT666 Surface
CEsat
FE
Conditions
open base
t
I
I
) at high I
p
C
B
≤ 300 μs
= 100 mA
= 1 A;
C
(BISS) transistor
and I
CM
C
CEsat
[1]
Min
-
-
-
-
Typ
-
-
-
140
Product data sheet
Max
20
2
4
175
Unit
V
A
A

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PBSS4220V,115 Summary of contents

Page 1

PBSS4220V NPN low V Rev. 02 — 11 December 2009 1. Product profile 1.1 General description NPN low V Mounted Device (SMD) plastic package. PNP complement: PBSS5220V. 1.2 Features Low collector-emitter saturation voltage V High collector ...

Page 2

... NXP Semiconductors 2. Pinning information Table 2. Pin Ordering information Table 3. Type number PBSS4220V 4. Marking Table 4. Type number PBSS4220V 5. Limiting values Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol V CBO V CEO V EBO tot T j PBSS4220V_2 Product data sheet Pinning ...

Page 3

... NXP Semiconductors Table 5. In accordance with the Absolute Maximum Rating System (IEC 60134). Symbol T amb T stg [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al [4] Reflow soldering is the only recommended soldering method ...

Page 4

... NXP Semiconductors 6. Thermal characteristics Table 6. Symbol R th(j-a) R th(j-sp) [1] Device mounted on an FR4 PCB, single-sided copper, tin-plated and standard footprint. [2] Device mounted on an FR4 PCB, single-sided copper, tin-plated, mounting pad for collector 1 cm [3] Device mounted on a ceramic PCB, Al [4] Reflow soldering is the only recommended soldering method. ...

Page 5

... NXP Semiconductors 7. Characteristics Table 7. ° amb Symbol Parameter I collector-base cut-off CBO current I collector-emitter cut-off CES current I emitter-base cut-off EBO current h DC current gain FE V collector-emitter CEsat saturation voltage R collector-emitter CEsat saturation resistance V base-emitter saturation BEsat voltage V base-emitter turn-on BEon voltage t delay time ...

Page 6

... NXP Semiconductors 1000 h FE 800 (1) 600 (2) 400 (3) 200 0 − 100 °C (1) T amb = 25 °C (2) T amb = −55 °C (3) T amb Fig 3. DC current gain as a function of collector current; typical values 1 V CEsat (V) −1 10 (1) (2) (3) −2 10 −3 10 − 100 °C (1) T amb = 25 ° ...

Page 7

... NXP Semiconductors 1.2 V BEsat (V) 1.0 (1) 0.8 (2) (3) 0.6 0.4 0.2 − −55 °C (1) T amb = 25 °C (2) T amb = 100 °C (3) T amb Fig 7. Base-emitter saturation voltage as a function of collector current; typical values 2.0 I (mA (A) 1.6 1.2 0.8 0 °C T amb Fig 9. ...

Page 8

... NXP Semiconductors 8. Test information Fig 11. BISS transistor switching time definition I Fig 12. Test circuit for switching times PBSS4220V_2 Product data sheet (probe) oscilloscope 450 Ω −50 mA open Ω mA Bon Boff Rev. 02 — 11 December 2009 PBSS4220V NPN low V (BISS) transistor CEsat input pulse ...

Page 9

... NXP Semiconductors 9. Package outline Fig 13. Package outline SOT666 10. Packing information Table 8. The indicated -xxx are the last three digits of the 12NC ordering code. Type number PBSS4220V [1] For further information and the availability of packing methods, see PBSS4220V_2 Product data sheet 1.7 1.5 ...

Page 10

... NXP Semiconductors 11. Soldering 2 1.7 1.075 Reflow soldering is the only recommended soldering method. Fig 14. Reflow soldering footprint PBSS4220V_2 Product data sheet 2.75 2.45 2.1 1.6 0.538 0.55 (2×) 1.7 0.45 0.6 (4×) (2×) 0.5 0.65 (4×) (2×) Rev. 02 — 11 December 2009 PBSS4220V ...

Page 11

... Table 9. Revision history Document ID Release date PBSS4220V_2 20091211 • Modifications: This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content. • Figure 14 “Reflow soldering PBSS4220V_1 20060206 PBSS4220V_2 ...

Page 12

... Right to make changes — NXP Semiconductors reserves the right to make changes to information published in this document, including without limitation specifications and product descriptions, at any time and without notice ...

Page 13

... NXP Semiconductors 15. Contents 1 Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.1 General description . . . . . . . . . . . . . . . . . . . . . 1 1.2 Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.3 Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1 1.4 Quick reference data . . . . . . . . . . . . . . . . . . . . 1 2 Pinning information . . . . . . . . . . . . . . . . . . . . . . 2 3 Ordering information . . . . . . . . . . . . . . . . . . . . . 2 4 Marking . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2 5 Limiting values Thermal characteristics . . . . . . . . . . . . . . . . . . 4 7 Characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . 5 8 Test information . . . . . . . . . . . . . . . . . . . . . . . . . 8 9 Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9 10 Packing information . . . . . . . . . . . . . . . . . . . . . 9 11 Soldering ...

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