PBSS4220V,115 NXP Semiconductors, PBSS4220V,115 Datasheet - Page 2

• Manufacturer Part Number: PBSS4220V,115
• Description: TRANS NPN 20V 2A LOW SAT SOT666
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS4220V,115

• Transistor Type: NPN
• Current - Collector (ic) (max): 2A
• Voltage - Collector Emitter Breakdown (max): 20V
• Vce Saturation (max) @ Ib, Ic: 350mV @ 200mA, 2A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 900mW
• Frequency - Transition: 210MHz
• Mounting Type: Surface Mount
• Package / Case: SS Mini-6 (SOT-666)
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Other names: 934059259115; PBSS4220V T/R; PBSS4220V T/R

NXP Semiconductors
2. Pinning information
3. Ordering information
4. Marking
5. Limiting values
PBSS4220V_2
Product data sheet
Table 2.
Table 3.
Table 4.
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Pin
1
2
3
4
5
6
Type number
PBSS4220V
Type number
PBSS4220V
Symbol
V
V
V
I
I
I
I
P
T
C
CM
B
BM
j
CBO
CEO
EBO
tot
Pinning
Ordering information
Marking codes
Limiting values
Parameter
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current
peak collector current
base current
peak base current
total power dissipation
junction temperature
Description
collector
collector
base
emitter
collector
collector
Package
Name
-
Rev. 02 — 11 December 2009
Description
plastic surface mounted package; 6 leads
Marking code
N6
Conditions
open emitter
open base
open collector
t
t
T
p
p
amb
≤ 300 μs
≤ 300 μs
≤ 25 °C
20 V, 2 A NPN low V
Simplified outline
1
6
[1][4]
[2][4]
[3][4]
2
5
3
4
Min
-
-
-
-
-
-
-
-
-
-
-
PBSS4220V
CEsat
Symbol
© NXP B.V. 2009. All rights reserved.
(BISS) transistor
Max
20
20
5
2
4
0.3
0.6
0.3
0.5
0.9
150
3
1, 2, 5, 6
sym014
Version
SOT666
4
Unit
V
V
V
A
A
A
A
W
W
W
°C
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