PBSS5350X,135 NXP Semiconductors, PBSS5350X,135 Datasheet - Page 10

• Manufacturer Part Number: PBSS5350X,135
• Description: TRANS PNP 50V 3A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS5350X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 390mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 3 A
• Maximum Dc Collector Current: - 5 A
• Power Dissipation: 550 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055948135; PBSS5350X /T3; PBSS5350X /T3

NXP Semiconductors
PACKAGE OUTLINE
2004 Nov 04
50 V, 3 A
PNP low V
Plastic surface-mounted package; collector pad for good heat transfer; 3 leads
DIMENSIONS (mm are the original dimensions)
UNIT
mm
VERSION
OUTLINE
SOT89
1.6
1.4
A
b p1
0.48
0.35
CEsat
0.53
0.40
b p2
(BISS) transistor
w
IEC
M
b p3
1.8
1.4
0.44
0.23
1
c
b
e
p1
1
TO-243
JEDEC
4.6
4.4
D
0
b
D
e
p3
REFERENCES
2
2.6
2.4
E
b
p2
3.0
e
SC-62
scale
JEITA
10
2
3
1.5
e 1
L
B
A
E
p
4.25
3.75
H E
1.2
0.8
4 mm
L p
0.13
w
PROJECTION
EUROPEAN
c
H
E
PBSS5350X
Product data sheet
ISSUE DATE
04-08-03
06-03-16
SOT89