PBSS5350X,135 NXP Semiconductors, PBSS5350X,135 Datasheet - Page 7

• Manufacturer Part Number: PBSS5350X,135
• Description: TRANS PNP 50V 3A SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of PBSS5350X,135

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: PNP
• Current - Collector (ic) (max): 3A
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 390mV @ 300mA, 3A
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 200 @ 1A, 2V
• Power - Max: 1.6W
• Frequency - Transition: 100MHz
• Mounting Type: Surface Mount
• Dc Collector/base Gain Hfe Min: 200
• Minimum Operating Temperature: - 65 C
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: - 50 V
• Emitter- Base Voltage Vebo: - 5 V
• Continuous Collector Current: - 3 A
• Maximum Dc Collector Current: - 5 A
• Power Dissipation: 550 mW
• Maximum Operating Frequency: 100 MHz
• Maximum Operating Temperature: + 150 C
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 934055948135; PBSS5350X /T3; PBSS5350X /T3

NXP Semiconductors
CHARACTERISTICS
T
Note
1. Pulse test: t
2004 Nov 04
I
I
I
h
V
R
V
V
f
C
SYMBOL
amb
CBO
CES
EBO
T
FE
CEsat
BEsat
BEon
50 V, 3 A
PNP low V
CEsat
c
= 25 °C unless otherwise specified.
collector-base cut-off current
collector-emitter cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
equivalent on-resistance
base-emitter saturation voltage
base-emitter turn-on voltage
transition frequency
collector capacitance
p
≤ 300 μs; δ ≤ 0.02.
CEsat
PARAMETER
(BISS) transistor
V
V
V
V
V
I
I
I
I
I
I
I
I
V
I
f = 100 MHz
V
C
C
C
C
C
C
C
C
C
CB
CB
CE
EB
CE
CE
CB
I
I
I
I
I
= −0.5 A; I
= −1 A; I
= −2 A; I
= −2 A; I
= −3 A; I
= −2 A; I
= −2 A; I
= −3 A; I
= −100 mA; V
C
C
C
C
C
= −5 V; I
= −50 V; I
= −50 V; I
= −50 V; V
= −2 V
= −2 V; I
= −10 V; I
= −0.1 A
= −0.5 A
= −1 A; note 1
= −2 A; note 1
= −3 A; note 1
B
B
B
B
B
B
B
CONDITIONS
7
= −50 mA
= −100 mA
= −200 mA; note 1
= −300 mA; note 1
= −200 mA; note 1
= −100 mA
= −300 mA; note 1
C
B
C
E
E
E
= 0 A
= −50 mA
= −1 A
BE
= 0 A
= 0 A; T
= i
CE
= 0 V
e
= −5 V;
= 0 A; f = 1 MHz
j
= 150 °C
−
−
−
−
200
200
200
130
80
−
−
−
−
−
−
−
−
−1.1
100
−
MIN.
−
−
−
−
−
−
−
−
−
−
−
−
−
−
90
−
−
−
−
−
TYP.
PBSS5350X
Product data sheet
−100
−50
−100
−100
−
−
450
−
−
−90
−180
−320
−270
−390
135
−1.1
−1.2
−
−
35
MAX.
nA
μA
nA
nA
mV
mV
mV
mV
mV
mΩ
V
V
V
MHz
pF
UNIT