PZTA14,115 NXP Semiconductors, PZTA14,115 Datasheet - Page 3

• Manufacturer Part Number: PZTA14,115
• Description: TRANS NPN 30V 500MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of PZTA14,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.25W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933982050115; PZTA14 T/R; PZTA14 T/R

NXP Semiconductors
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tinplated, mounting pad for collector 1 cm
CHARACTERISTICS
T
1999 Apr 14
R
R
I
I
I
h
V
V
f
j
CBO
CES
EBO
T
SYMBOL
SYMBOL
FE
= 25 °C unless otherwise specified.
CEsat
BEon
NPN Darlington transistor
th j-a
th j-s
For other mounting conditions, see “Thermal considerations for SOT223 in the General Part of associated
Handbook”.
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
collector cut-off current
collector cut-off current
emitter cut-off current
DC current gain
collector-emitter saturation voltage I
base-emitter on-state voltage
transition frequency
PARAMETER
PARAMETER
I
V
I
V
I
I
E
C
C
C
C
BE
CE
I
I
= 0; V
= 0; V
= 100 mA; I
= 100 mA; V
= 10 mA; V
C
C
= 0; V
= 5 V; (see Fig.2)
= 10 mA
= 100 mA
3
CB
EB
CE
CONDITIONS
= 30 V
= 10 V
= 30 V
CE
B
CE
= 0.1 mA
= 5 V; f = 100 MHz
note 1
= 5 V
CONDITIONS
−
−
−
10 000
20 000
−
−
125
MIN.
VALUE
100
19
100
100
100
−
−
1.5
2
−
Product data sheet
MAX.
PZTA14
UNIT
K/W
K/W
2
nA
nA
nA
V
V
MHz
.
UNIT