PZTA14,115 NXP Semiconductors, PZTA14,115 Datasheet - Page 4

• Manufacturer Part Number: PZTA14,115
• Description: TRANS NPN 30V 500MA SOT223
• Manufacturer: NXP Semiconductors

Specifications of PZTA14,115

• Package / Case: SOT-223 (3 leads + Tab), SC-73, TO-261
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 30V
• Vce Saturation (max) @ Ib, Ic: 1.5V @ 100µA, 100mA
• Current - Collector Cutoff (max): 100nA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 20000 @ 100mA, 5V
• Power - Max: 1.25W
• Frequency - Transition: 125MHz
• Mounting Type: Surface Mount
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 30 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 30 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Polarity: NPN
• Number Of Elements: 1
• Collector-emitter Voltage: 30V
• Collector-base Voltage(max): 30V
• Emitter-base Voltage (max): 10V
• Collector-emitter Saturation Voltage: 1.5@0.1mA@100mAV
• Collector Current (dc) (max): 500mA
• Operating Temp Range: -65C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3 +Tab
• Package Type: SOT-223
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant, Lead free / RoHS Compliant
• Other names: 933982050115; PZTA14 T/R; PZTA14 T/R

NXP Semiconductors
1999 Apr 14
handbook, full pagewidth
NPN Darlington transistor
V
CE
80000
60000
40000
20000
h FE
= 2 V.
0
10
−1
1
Fig.2 DC current gain; typical values.
4
10
10
2
I C (mA)
Product data sheet
PZTA14
MGD837
10
3