PXT2222A,115 NXP Semiconductors, PXT2222A,115 Datasheet - Page 6

TRANS NPN SW 40V 100MA SOT89-3

PXT2222A,115

Manufacturer Part Number
PXT2222A,115
Description
TRANS NPN SW 40V 100MA SOT89-3
Manufacturer
NXP Semiconductors
Series
-r
Datasheet

Specifications of PXT2222A,115

Package / Case
SC-62, SOT-89, TO-243 (3 Leads + Tab)
Transistor Type
NPN
Current - Collector (ic) (max)
100mA
Voltage - Collector Emitter Breakdown (max)
40V
Vce Saturation (max) @ Ib, Ic
1V @ 50mA, 500mA
Dc Current Gain (hfe) (min) @ Ic, Vce
100 @ 150mA, 10V
Power - Max
1.1W
Frequency - Transition
300MHz
Mounting Type
Surface Mount
Minimum Operating Temperature
- 65 C
Configuration
Single
Transistor Polarity
NPN
Mounting Style
SMD/SMT
Collector- Emitter Voltage Vceo Max
40 V
Emitter- Base Voltage Vebo
6 V
Maximum Dc Collector Current
0.1 A
Power Dissipation
1100 mW
Maximum Operating Frequency
300 MHz
Maximum Operating Temperature
+ 150 C
Current - Collector Cutoff (max)
-
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Lead Free Status / Rohs Status
Lead free / RoHS Compliant
Other names
568-1181-2
933821820115
PXT2222A T/R

Available stocks

Company
Part Number
Manufacturer
Quantity
Price
Part Number:
PXT2222A,115
Manufacturer:
NEXPERIA/安世
Quantity:
20 000
NXP Semiconductors
CHARACTERISTICS
T
2004 Nov 22
I
I
h
V
V
C
C
f
F
Switching times (between 10% and 90% levels); (see Fig.6)
t
t
t
t
t
t
amb
CBO
EBO
T
on
d
r
off
s
f
SYMBOL
FE
CEsat
BEsat
NPN switching transistor
c
e
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation
voltage
base-emitter saturation voltage
collector capacitance
emitter capacitance
transition frequency
noise figure
turn-on time
delay time
rise time
turn-off time
storage time
fall time
PARAMETER
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
I
f = 1 kHz; B = 200 Hz
I
I
E
E
C
C
C
C
C
C
C
C
C
C
C
C
E
C
C
C
Con
Boff
= 0 A; V
= 0 A; V
= i
= 0 A; V
= 0.1 mA; V
= 1 mA; V
= 10 mA; V
= 10 mA; V
= 150 mA; V
= 150 mA; V
= 500 mA; V
= 150 mA; I
= 500 mA; I
= 150 mA; I
= 500 mA; I
= i
= 20 mA; V
= 200 µA; V
= −15 mA
= 150 mA; I
e
c
= 0 A; V
= 0 A; V
6
CB
CB
BE
CONDITIONS
CE
= 60 V
= 60 V; T
= 5 V
CE
C
CE
B
B
B
B
CE
CE
CB
EB
CE
CE
CE
= 10 V
= 10 V; T
= 15 mA
= 50 mA
= 15 mA
= 50 mA
Bon
= 10 V
= 10 V; f = 100 MHz
= 10V
= 500 mV; f = 1 MHz −
= 5 V; R
= 10 V; f = 1 MHz
= 1 V
= 10 V
= 10 V
= 15 mA;
j
= 125 °C
j
S
= −55 °C
= 2 kΩ;
35
50
75
35
50
100
40
0.6
300
MIN.
10
10
10
300
300
1
1.2
2
8
25
4
35
15
20
250
200
60
Product data sheet
PXT2222A
MAX.
nA
µA
nA
mV
V
V
V
pF
pF
MHz
dB
ns
ns
ns
ns
ns
ns
UNIT

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