BCV49,115 NXP Semiconductors, BCV49,115 Datasheet - Page 3

• Manufacturer Part Number: BCV49,115
• Description: TRANS DARL NPN 60V 500MA SOT89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BCV49,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN - Darlington
• Current - Collector (ic) (max): 500mA
• Voltage - Collector Emitter Breakdown (max): 60V
• Vce Saturation (max) @ Ib, Ic: 1V @ 100µA, 100mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 10000 @ 100mA, 5V
• Power - Max: 1.3W
• Frequency - Transition: 220MHz
• Mounting Type: Surface Mount
• Configuration: Single
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 60 V
• Emitter- Base Voltage Vebo: 10 V
• Collector- Base Voltage Vcbo: 80 V
• Maximum Dc Collector Current: 0.5 A
• Maximum Collector Cut-off Current: 0.1 uA
• Maximum Operating Temperature: + 150 C
• Minimum Operating Temperature: - 65 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 934003660115; BCV49 T/R; BCV49 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 1 cm
2004 Dec 06
V
V
V
I
I
I
P
T
T
T
R
R
SYMBOL
C
CM
BM
SYMBOL
stg
j
amb
CBO
CES
EBO
tot
NPN Darlington transistors
th(j-a)
th(j-s)
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BCV29
BCV49
BCV29
BCV49
PARAMETER
PARAMETER
3
open emitter
V
open collector
T
amb
BE
CONDITIONS
note 1
= 0 V
≤ 25 °C; note 1 −
CONDITIONS
−
−
−
−
−
−
−
−
−65
−
−65
MIN.
VALUE
BCV29; BCV49
96
16
40
80
30
60
10
500
1
200
1.3
+150
150
+150
MAX.
Product data sheet
UNIT
V
V
V
V
V
mA
A
mA
W
°C
°C
°C
K/W
K/W
2
2
UNIT
.
.