BCV49 /T3 NXP Semiconductors, BCV49 /T3 Datasheet

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BCV49 /T3

Manufacturer Part Number
BCV49 /T3
Description
Transistors Bipolar - BJT TRANS DARLINGTON TAPE-11
Manufacturer
NXP Semiconductors
Datasheet

Specifications of BCV49 /T3

Product Category
Transistors Bipolar - BJT
Rohs
yes
Configuration
Single
Transistor Polarity
NPN
Collector- Base Voltage Vcbo
80 V
Collector- Emitter Voltage Vceo Max
60 V
Emitter- Base Voltage Vebo
10 V
Maximum Dc Collector Current
0.5 A
Dc Collector/base Gain Hfe Min
2000 at 1 mA at 5 V
Maximum Operating Temperature
+ 150 C
Mounting Style
SMD/SMT
Package / Case
SOT-89-4
Minimum Operating Temperature
- 65 C
Factory Pack Quantity
4000
Part # Aliases
BCV49,135
Product data sheet
Supersedes data of 1999 Apr 08
dbook, halfpage
DATA SHEET
BCV29; BCV49
NPN Darlington transistors
DISCRETE SEMICONDUCTORS
M3D109
2004 Dec 06

Related parts for BCV49 /T3

BCV49 /T3 Summary of contents

Page 1

... DATA SHEET dbook, halfpage BCV29; BCV49 NPN Darlington transistors Product data sheet Supersedes data of 1999 Apr 08 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 06 ...

Page 2

... NXP Semiconductors NPN Darlington transistors FEATURES • High current (max. 500 mA) • Low voltage (max • High DC current gain (min. 20 000). APPLICATIONS • Preamplifier input applications. DESCRIPTION NPN small-signal Darlington transistor in a surface mount SOT89 plastic package. PNP complements: BCV28 and BCV48 ...

Page 3

... NXP Semiconductors NPN Darlington transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BCV29 BCV49 V collector-emitter voltage CES BCV29 BCV49 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current ...

Page 4

... NXP Semiconductors NPN Darlington transistors CHARACTERISTICS = 25 °C unless otherwise specified. T amb SYMBOL PARAMETER I collector-base cut-off current CBO BCV29 BCV49 I emitter-base cut-off current EBO h DC current gain FE BCV29 DC current gain BCV49 V collector-emitter saturation voltage I CEsat V base-emitter saturation voltage BEsat V base-emitter on-state voltage ...

Page 5

... NXP Semiconductors NPN Darlington transistors 80000 handbook, full pagewidth h FE 60000 40000 20000 0 − 2004 Dec Fig.2 DC current gain; typical values. 5 Product data sheet BCV29; BCV49 MGD837 (mA) ...

Page 6

... NXP Semiconductors NPN Darlington transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec ...

Page 7

... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...

Page 8

... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...

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