BST39,115 NXP Semiconductors, BST39,115 Datasheet
BST39,115
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BST39 T/R
BST39 T/R
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BST39,115 Summary of contents
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DATA SHEET dbook, halfpage BST39; BST40 NPN high-voltage transistors Product data sheet Supersedes data of 2000 Jul 03 DISCRETE SEMICONDUCTORS M3D109 2004 Dec 14 ...
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... NXP Semiconductors NPN high-voltage transistors FEATURES • Low current (max. 100 mA) • High voltage (max. 350 V). APPLICATIONS • General purpose switching and amplification. DESCRIPTION NPN high-voltage transistor in a SOT89 plastic package. PNP complements: BST15 and BST16. MARKING TYPE NUMBER BST39 BST40 ...
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... NXP Semiconductors NPN high-voltage transistors LIMITING VALUES In accordance with the Absolute Maximum Rating System (IEC 60134). SYMBOL PARAMETER V collector-base voltage CBO BST39 BST40 V collector-emitter voltage CEO BST39 BST40 V emitter-base voltage EBO I collector current (DC peak collector current CM I peak base current BM P total power dissipation ...
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... NXP Semiconductors NPN high-voltage transistors PACKAGE OUTLINE Plastic surface-mounted package; collector pad for good heat transfer; 3 leads w M DIMENSIONS (mm are the original dimensions) UNIT 1.6 0.48 0.53 1.8 mm 1.4 0.35 0.40 1.4 OUTLINE VERSION IEC SOT89 2004 Dec scale 0.44 4.6 2 ...
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... NXP Semiconductors. In case of any inconsistency or conflict between information in this document and such terms and conditions, the latter will prevail. ...
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... NXP Semiconductors Customer notification This data sheet was changed to reflect the new company name NXP Semiconductors, including new legal definitions and disclaimers. No changes were made to the technical content, except for package outline drawings which were updated to the latest version. Contact information For additional information please visit: http://www ...