BST39,115 NXP Semiconductors, BST39,115 Datasheet - Page 3

• Manufacturer Part Number: BST39,115
• Description: TRANSISTOR NPN 350V 100MA SOT-89
• Manufacturer: NXP Semiconductors
• Series: -r

Specifications of BST39,115

• Package / Case: SC-62, SOT-89, TO-243 (3 Leads + Tab)
• Transistor Type: NPN
• Current - Collector (ic) (max): 100mA
• Voltage - Collector Emitter Breakdown (max): 350V
• Vce Saturation (max) @ Ib, Ic: 500mV @ 4mA, 50mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 40 @ 20mA, 10V
• Power - Max: 1.3W
• Frequency - Transition: 70MHz
• Mounting Type: Surface Mount
• Minimum Operating Temperature: - 65 C
• Configuration: Single Dual Collector
• Transistor Polarity: NPN
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 350 V
• Emitter- Base Voltage Vebo: 5 V
• Maximum Dc Collector Current: 0.1 A
• Power Dissipation: 1300 mW
• Maximum Operating Frequency: 70 MHz
• Maximum Operating Temperature: + 150 C
• Current - Collector Cutoff (max): -
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: 933516290115; BST39 T/R; BST39 T/R

NXP Semiconductors
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
THERMAL CHARACTERISTICS
Note
1. Device mounted on a printed-circuit board, single-sided copper, tin-plated, mounting pad for collector 6 cm
CHARACTERISTICS
T
2004 Dec 14
V
V
V
I
I
I
P
T
T
T
R
R
I
I
h
V
C
f
SYMBOL
amb
C
CM
BM
CBO
EBO
T
SYMBOL
SYMBOL
FE
stg
j
amb
CBO
CEO
EBO
tot
CEsat
NPN high-voltage transistors
th(j-a)
th(j-s)
c
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
For other mounting conditions, see “Thermal considerations for SOT89 in the General Part of associated Handbook”.
= 25 °C unless otherwise specified.
collector-base cut-off current
emitter-base cut-off current
DC current gain
collector-emitter saturation voltage I
collector capacitance
transition frequency
collector-base voltage
collector-emitter voltage
emitter-base voltage
collector current (DC)
peak collector current
peak base current
total power dissipation
storage temperature
junction temperature
ambient temperature
thermal resistance from junction to ambient
thermal resistance from junction to soldering point
BST39
BST40
BST39
BST40
PARAMETER
PARAMETER
PARAMETER
I
I
I
I
I
E
C
C
C
E
C
= 0 A; V
= i
= 0 A; V
= 20 mA; V
= 50 mA; I
= 10 mA; V
open emitter
open base
open collector
T
e
amb
= 0 A; V
≤ 25 °C; note 1
3
CB
EB
CONDITIONS
B
CONDITIONS
= 300 V
= 5 V
CE
CE
CB
= 4 mA
= 10 V
= 10 V; f = 100 MHz 70
= 10 V; f = 1 MHz
note 1
CONDITIONS
−
−
−
−
−
−
−
−
−
−65
−
−65
−
−
40
−
−
MIN.
MIN.
VALUE
96
16
BST39; BST40
400
300
350
250
5
100
200
100
1.3
+150
150
+150
20
100
−
500
2
−
Product data sheet
MAX.
MAX.
UNIT
K/W
K/W
V
V
V
V
V
mA
mA
mA
W
°C
°C
°C
nA
nA
mV
pF
MHz
2
2
UNIT
UNIT
.
.