2SC5548(TE16L1,NQ) Toshiba, 2SC5548(TE16L1,NQ) Datasheet
2SC5548(TE16L1,NQ)
Specifications of 2SC5548(TE16L1,NQ)
Related parts for 2SC5548(TE16L1,NQ)
2SC5548(TE16L1,NQ) Summary of contents
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... TOSHIBA Transistor Silicon NPN Triple Diffused Type High Voltage Switching Applications Switching Regulator Applications DC-DC Converter Applications • High speed switching 0.5 µs (max • High collector breakdown voltage: V • High DC current gain (min Maximum Ratings (Ta = 25°C) Characteristics Collector-base voltage ...
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Electrical Characteristics (Ta = 25°C) Characteristics Collector cut-off current Emitter cut-off current Collector-base breakdown voltage Collector-emitter breakdown voltage DC current gain Collector emitter saturation voltage Base-emitter saturation voltage Rise time Storage time Switching time Fall time Marking C5548 Part No. ...
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I – 2.0 200 150 100 1 1 0.4 Common emitter Tc = 25° Collector-emitter voltage V ( – ...
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Safe Operating Area 10 100 µ max (pulsed max 3 10 µs* (continuous operation 0 25°C 0.3 10 ...
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... The information contained herein is presented only as a guide for the applications of our products. No responsibility is assumed by TOSHIBA for any infringements of patents or other rights of the third parties which may result from its use. No license is granted by implication or otherwise under any patent or patent rights of TOSHIBA or others. • ...