2SC5548(TE16L1,NQ) Toshiba, 2SC5548(TE16L1,NQ) Datasheet - Page 3

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2SC5548(TE16L1,NQ)

Manufacturer Part Number
2SC5548(TE16L1,NQ)
Description
TRANSISTOR NPN 370V 2A PW-MOLD
Manufacturer
Toshiba
Datasheet

Specifications of 2SC5548(TE16L1,NQ)

Transistor Type
NPN
Current - Collector (ic) (max)
2A
Voltage - Collector Emitter Breakdown (max)
370V
Vce Saturation (max) @ Ib, Ic
1V @ 100mA, 800mA
Dc Current Gain (hfe) (min) @ Ic, Vce
60 @ 200mA, 5V
Power - Max
1W
Mounting Type
Surface Mount
Package / Case
PW-Mold
Lead Free Status / RoHS Status
Lead free / RoHS Compliant
Current - Collector Cutoff (max)
-
Frequency - Transition
-
0.03
0.3
0.1
2.0
1.6
1.2
0.8
0.4
2.0
1.6
1.2
0.8
0.4
10
0.01
3
1
0
0
0
0
Common emitter
I C /I B = 8
Common emitter
V CE = 5 V
0.03
Collector-emitter voltage V
Tc = 100°C
Base-emitter voltage V
2
0.4
Collector current I
200
0.1
V
CE (sat)
4
I
I
C
C
25
– V
– V
0.3
0.8
Tc = 100°C
25
CE
BE
– I
6
−55
−55
C
C
Common emitter
Tc = 25°C
1
BE
CE
(A)
1.2
(V)
I B = 10 mA
8
(V)
3
150
100
80
40
20
60
1.6
10
10
3
1000
300
100
0.3
0.1
30
10
10
20
16
12
0.001
0.01
3
1
3
8
4
0
1
0
(1)
(2)
0.003
Common emitter
V CE = 5 V
25
0.03
Ambient temperature Ta (°C)
50
Collector current I
Collector current I
0.01
Tc = 100°C
V
75
0.1
25
−55
BE (sat)
0.03
h
25
P
FE
C
100
Tc = 100°C
– Ta
– I
−55
0.1
C
– I
0.3
(1) Tc = Ta
(2) No heat sink
125
C
C
C
infinite heat sink
Common emitter
I C /I B = 8
0.3
(A)
(A)
150
1
175
1
2005-02-01
2SC5548
200
3
3

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