MMBT5087LT1G ON Semiconductor, MMBT5087LT1G Datasheet - Page 2

• Manufacturer Part Number: MMBT5087LT1G
• Description: TRANS GP SS PNP LN 50V SOT23
• Manufacturer: ON Semiconductor
• Type: Low Noiser

Specifications of MMBT5087LT1G

• Transistor Type: PNP
• Current - Collector (ic) (max): 50mA
• Voltage - Collector Emitter Breakdown (max): 50V
• Vce Saturation (max) @ Ib, Ic: 300mV @ 1mA, 10mA
• Dc Current Gain (hfe) (min) @ Ic, Vce: 250 @ 100µA, 5V
• Power - Max: 225mW
• Frequency - Transition: 40MHz
• Mounting Type: Surface Mount
• Package / Case: SOT-23-3, TO-236-3, Micro3™, SSD3, SST3
• Configuration: Single
• Transistor Polarity: PNP
• Mounting Style: SMD/SMT
• Collector- Emitter Voltage Vceo Max: 50 V
• Emitter- Base Voltage Vebo: 3 V
• Continuous Collector Current: - 0.05 A
• Maximum Dc Collector Current: 0.05 A
• Power Dissipation: 225 mW
• Maximum Operating Frequency: 40 MHz
• Maximum Operating Temperature: + 150 C
• Dc Collector/base Gain Hfe Min: 250 at 0.1 mA at 5 V
• Minimum Operating Temperature: - 55 C
• Current, Collector: -50 mA
• Current, Gain: 250
• Frequency: 40 MHz
• Package Type: SOT-23
• Polarity: PNP
• Primary Type: Si
• Voltage, Breakdown, Collector To Emitter: -50 V
• Voltage, Collector To Base: -50 V
• Voltage, Collector To Emitter: -50 V
• Voltage, Collector To Emitter, Saturation: -0.3 V
• Voltage, Emitter To Base: -3 V
• Number Of Elements: 1
• Collector-emitter Voltage: 50V
• Collector-base Voltage: 50V
• Emitter-base Voltage: 3V
• Collector Current (dc) (max): 50mA
• Dc Current Gain (min): 250
• Frequency (max): 40MHz
• Operating Temp Range: -55C to 150C
• Operating Temperature Classification: Military
• Mounting: Surface Mount
• Pin Count: 3
• Lead Free Status / RoHS Status: Lead free / RoHS Compliant
• Current - Collector Cutoff (max): -
• Lead Free Status / Rohs Status: Lead free / RoHS Compliant
• Other names: MMBT5087LT1GOS; MMBT5087LT1GOS; MMBT5087LT1GOSTR

ELECTRICAL CHARACTERISTICS
OFF CHARACTERISTICS
ON CHARACTERISTICS
SMALL−SIGNAL CHARACTERISTICS
Collector−Emitter Breakdown Voltage
Collector−Base Breakdown Voltage
Collector Cutoff Current
DC Current Gain
Collector−Emitter Saturation Voltage
Base−Emitter Saturation Voltage
Current−Gain — Bandwidth Product
Output Capacitance
Small−Signal Current Gain
Noise Figure
7.0
5.0
3.0
2.0
1.0
10
10
(I
(I
(V
(V
(I
(I
(I
(I
(I
(I
(V
(I
(I
(I
1.0 mA
C
C
C
C
C
C
C
C
C
C
C
CB
CB
CB
= −100 mAdc, V
= −1.0 mAdc, V
= −10 mAdc, V
= −10 mAdc, I
= −10 mAdc, I
= −500 mAdc, V
= −1.0 mAdc, V
= −20 mAdc, V
= −100 mAdc, V
= −1.0 mAdc, I
= −100 mAdc, I
20
= −10 Vdc, I
= −35 Vdc, I
= −5.0 Vdc, I
50
Figure 1. Noise Voltage
B
B
100
E
E
B
E
CE
E
CE
CE
CE
CE
CE
CE
= −1.0 mAdc)
= −1.0 mAdc)
= 0)
= 0)
= 0)
= 0)
= 0, f = 1.0 MHz)
f, FREQUENCY (Hz)
I
C
= −5.0 Vdc)
= −5.0 Vdc, R
100 mA
300 mA
30 mA
= −5.0 Vdc)
= −5.0 Vdc)
= −5.0 Vdc, f = 20 MHz)
= −5.0 Vdc, f = 1.0 kHz)
= −5.0 Vdc, R
= 10 mA
200
Characteristic
500 1.0 k
(T
S
S
BANDWIDTH = 1.0 Hz
A
= 10 kW, f = 1.0 kHz)
TYPICAL NOISE CHARACTERISTICS
= 3.0 kW, f = 1.0 kHz)
= 25°C unless otherwise noted)
R
2.0 k
S
(V
≈ 0
CE
5.0 k 10 k
http://onsemi.com
= − 5.0 Vdc, T
2
7.0
5.0
3.0
2.0
1.0
0.7
0.5
0.3
0.2
0.1
1.0
A
10
= 25°C)
20
50
Figure 2. Noise Current
V
V
Symbol
V
V
(BR)CEO
(BR)CBO
100
I
CE(sat)
BE(sat)
C
h
CBO
NF
h
f
obo
FE
T
f, FREQUENCY (Hz)
fe
I
C
200
= 1.0 mA
100 mA
300 mA
30 mA
10 mA
500
Min
−50
−50
250
250
250
250
40
−
−
−
−
−
−
−
BANDWIDTH = 1.0 Hz
1.0 k 2.0 k
Max
−0.3
0.85
−10
−50
800
900
4.0
2.0
2.0
R
−
−
−
−
−
S
≈ ∞
5.0 k 10 k
nAdc
MHz
Unit
Vdc
Vdc
Vdc
Vdc
dB
pF
−
−